An apparatus comprising an integrated circuit chip comprising a first surface region and a second surface region adjacent to the first surface region; a substrate coupled to the integrated circuit chip through a plurality of connections comprising solder; and underfill between the substrate and the integrated circuit chip, wherein the underfill contacts the second surface region, but does not contact the first surface region.

A light emitting device includes: a package including a base portion, a frame portion, and a cover portion; a light emitting element disposed on an upper surface of the base portion, surrounded by the frame portion, and configured to emit light traveling laterally; and a wavelength conversion member disposed on the base portion and including a first lateral surface on which light emitted from a light extraction surface of the light emitting element is to be incident, and an upper surface through which light is to be emitted. The frame portion includes a light shielding portion configured to shield light in a wavelength range of the light emitted from the light emitting element. The cover portion includes a light-transmissive portion configured to transmit and cause light emitted from the upper surface of the wavelength conversion member to exit to an area outside the light emitting device.

A laser module includes a gain chip, temperature sensors, a case, and a thermoelectric cooler (TEC). The gain chip emits a laser beam. One of the temperature sensors measures a first temperature of the gain chip and is encompassed by the gain chip. The other temperature sensor is adhered to the case and measures a second temperature. The TEC tunes the laser beam emitted by the gain chip to a desired wavelength by varying the first temperature of the gain chip through a set of third temperatures for various values of the second temperature. The set of third temperatures is selected from various values of the first temperature such that the laser beam emitted at the set of third temperatures is mode-hop free.

The present invention provides a red light emitting glass ceramic and a preparation method thereof, and an LED/LD light emitting device. A.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+ cordierite of the red light emitting glass ceramic capable of realizing blue light excited red light emission is a crystal phase material, wherein A is at least one of Mg, Ca, Sr, Ba and Zn and at least comprises Mg. The present invention particularly provides the red light emitting glass ceramic taking a chemical formula A.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+ as a crystal phase. The present invention further provides a preparation method of the transparent glass ceramic. The glass ceramic comprising the crystal phase, with the chemical formula of Mg.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+, is excited by blue light to emit red light, the internal/external quantum efficiencies reaching up to 94.5%/70.6%, respectively.

The present invention provides a red light emitting glass ceramic and a preparation method thereof, and an LED/LD light emitting device. A.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+ cordierite of the red light emitting glass ceramic capable of realizing blue light excited red light emission is a crystal phase material, wherein A is at least one of Mg, Ca, Sr, Ba and Zn and at least comprises Mg. The present invention particularly provides the red light emitting glass ceramic taking a chemical formula A.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+ as a crystal phase. The present invention further provides a preparation method of the transparent glass ceramic. The glass ceramic comprising the crystal phase, with the chemical formula of Mg.sub.2Al.sub.4Si.sub.5O.sub.18:Eu.sup.2+, is excited by blue light to emit red light, the internal/external quantum efficiencies reaching up to 94.5%/70.6%, respectively.

An optical-element mounting package includes: a metal base; an insulating base having a frame shape and located on the metal base; an external terminal located on the insulating base; a wiring located in the insulating base and electrically connected to the external terminal; and a reflecting component. A cavity enclosed by the metal base and the inner wall of the insulating base includes a first region and a second region. The first region includes a first mounting portion for an optical element. The second region includes a second mounting portion for the reflecting component. The first region and the second region are arranged in a direction in which light from the optical element travels toward the reflecting component. The wiring is located toward the first region relative to the second region.

A method for producing a housing cover for a laser component, a housing for a laser component, and a laser component are provided. The method includes providing an at least partially radiation-permeable window including an aluminum oxide, provide a copper carrier for the window, and forming a copper oxide in an oxide region on the copper carrier. The method further includes arranging the window at the oxide region, forming a eutectic bond between the window and the copper oxide in the oxide region, and thereby fixing the window to the copper carrier.

There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.

A semiconductor light-emitting device is provided which includes: a wiring substrate; a semiconductor light-emitting element disposed above an upper surface of the wiring substrate; and a cap unit which covers the semiconductor light-emitting element. The wiring substrate includes: a first substrate; a first metal layer and a second metal layer that are spaced apart from each other above the first substrate; and a spacer layer disposed above the first substrate. The cap unit includes a bonding surface which is bonded to the wiring substrate. The bonding surface intersects the first metal layer and the second metal layer in a top view of the wiring substrate, and the spacer layer is disposed between the bonding surface and the first substrate, at a position different from positions of the first metal layer and the second metal layer.

A semiconductor light-emitting device is provided which includes: a wiring substrate; a semiconductor light-emitting element disposed above an upper surface of the wiring substrate; and a cap unit which covers the semiconductor light-emitting element. The wiring substrate includes: a first substrate; a first metal layer and a second metal layer that are spaced apart from each other above the first substrate; and a spacer layer disposed above the first substrate. The cap unit includes a bonding surface which is bonded to the wiring substrate. The bonding surface intersects the first metal layer and the second metal layer in a top view of the wiring substrate, and the spacer layer is disposed between the bonding surface and the first substrate, at a position different from positions of the first metal layer and the second metal layer.