Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.

A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.

A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

An optoelectronic semiconductor chip comprises a semiconductor body including a plurality of active regions configured to generate electromagnetic radiation, the plurality of active regions being arranged in a horizontal plane. The optoelectronic semiconductor chip further comprises a conductive member configured to electrically connect at least two adjacent ones of the active regions with each other, the conductive member being arranged over a first main surface of the semiconductor body. The optoelectronic semiconductor chip further comprises a contact element extending from the first main surface to a second main surface of the semiconductor body and being electrically connected to at least one of the active regions via a contact material over the first main surface, and an optical element arranged over the first main surface of the semiconductor body.

To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to/from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.

To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to/from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.