This optical transmission module includes: a plurality of semiconductor lasers provided on a sub-mount fixed to a side surface of a block fixed on a plate-shaped stem made of metal; and a cap with a lens fixed thereto, the cap covering all members placed above the stem. The same number of lead pins as the semiconductor lasers are provided so as to respectively penetrate through a plurality of holes formed in the stem. The lead pins and the semiconductor lasers are electrically connected to each other, respectively. Single-phase electrical signals with the stem as a ground potential are respectively applied to the semiconductor lasers from an external power supply, through the lead pins, respectively, so as to cause modulation and oscillation of the semiconductor lasers.

This optical transmission module includes: a plurality of semiconductor lasers provided on a sub-mount fixed to a side surface of a block fixed on a plate-shaped stem made of metal; and a cap with a lens fixed thereto, the cap covering all members placed above the stem. The same number of lead pins as the semiconductor lasers are provided so as to respectively penetrate through a plurality of holes formed in the stem. The lead pins and the semiconductor lasers are electrically connected to each other, respectively. Single-phase electrical signals with the stem as a ground potential are respectively applied to the semiconductor lasers from an external power supply, through the lead pins, respectively, so as to cause modulation and oscillation of the semiconductor lasers.

A method for manufacturing a light emitting device includes: disposing a light emitting element on a base member; providing a bonding agent to the base member or a lid member; and bonding the base member on which the light emitting element is disposed and the lid member with the bonding agent by sandwiching the bonding agent in a molten state between the base member and the lid member, and pressing the lid member against the base member, increasing a distance between the base member and the lid member in a state in which the lid member is pressed against the base member, while maintaining a state in which the bonding agent contacts the base member and the lid member, and solidifying the bonding agent in a state in which the distance between the base member and the lid member is increased to bond the base member and the lid member.

An optical semiconductor device includes: a semiconductor substrate including a first main surface and a second main surface; a stacked body that is formed on the first main surface and includes an active layer and a contact layer arranged on a side opposite to the semiconductor substrate with respect to the active layer; a first electrode in contact with the contact layer; and a second electrode formed on the second main surface. The stacked body includes a light transmitting portion formed by not covering at least part of a surface of the contact layer on a side opposite to the semiconductor substrate with the first electrode. The optical semiconductor device is configured such that a waveguide mode is not formed by current application through the first electrode and the second electrode in a state in which the light transmitting portion is not in optical contact with an external member.

A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

A semiconductor device includes a substrate, a first type semiconductor structure, semiconductor columnar bodies between the substrate and the first type semiconductor structure, a first electrode and a second electrode. The first type semiconductor structure includes a first surface, a second surface opposite the first surface and away from the substrate, a first extension and a second extension respectively extending outward beyond the semiconductor columnar bodies. The first electrode and the second electrode are on the second surface of the first type semiconductor structure.

A device includes: a mesa stripe structure comprising a semiconductor in a stripe shape extending in a first direction, with first and second portions spaced apart in the first direction, and a third portion between the first and second portions; and an electrode pattern including a first electrode overlapping with the first portion but not overlapping with the second portion, and a second electrode overlapping with the second portion but not overlapping with the first portion. The first and second electrodes are separated. The electrode pattern comprises a metal in a shape of not overlapping with the third portion. The electrode pattern includes an adjacent area not overlapping with the mesa stripe structure. The adjacent area is next to the third portion in a second direction orthogonal to the first direction, and is on a semiconductor layer continuous to the mesa stripe structure.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

An optical member holding device including a holding member, an optical member and an elastic member. The holding member has a recess defined by one or more lateral surfaces and a bottom surface with a through-hole opening at the bottom surface. The optical member is disposed on the bottom surface, and includes a light transmissive part. The optical member has an upper surface and one or more lateral surfaces. The elastic member consists of an inorganic material, and has a wavelike shape and disposed between the one or more lateral surfaces of the recess and the one or more lateral surfaces of the optical member so as to be in contact with the one or more lateral surfaces of the recess and the one or more lateral surfaces of the optical member to exert elastic force that secures the optical member to a predetermined location in the recess.