A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above the P-side first barrier layer. The P-side second barrier layer has an AI composition ratio higher than an AI composition ratio of the P-side first barrier layer. The P-side second barrier layer has band gap energy greater than band gap energy of the P-side first barrier layer. The semiconductor laser device has an end face window structure in which band gap energy of a portion of the well layer in a vicinity of an end face that emits the laser light is greater than band gap energy of a central portion of the well layer in a resonator length direction.

A laser device is provided. The laser device includes a bottom plate, a frame body, a heat sink and a light-emitting chip. The light-emitting chip is located on a surface of the heat sink away from the bottom plate. The light-emitting chip includes a plurality of first protrusions and/or a plurality of first depressions, the plurality of first protrusions and/or the plurality of first depressions are located on a first surface of the light-emitting chip; the heat sink includes a plurality of second depressions and/or a plurality of second protrusions, the plurality of second depressions and/or the plurality of second protrusions are located on a second surface of the heat sink; the plurality of first protrusions are located in the plurality of second depressions, and the plurality of second protrusions are located in the plurality of first depressions.

A metal stem includes a cylindrical portion in which an FPC inserting portion is formed, and a base standing upright from one plane of the cylindrical portion. A tubular lens cap with one open end is fixed to a peripheral portion of the one plane of the cylindrical portion, and has a lens mounted on a bottomed portion. A substrate mounted on one plane of the base includes a signal wiring layer and a ground wiring layer. An optical semiconductor element is mounted on the substrate and has a signal terminal connected to the signal wiring layer of the substrate, and a ground terminal connected to the ground wiring layer of the substrate. An FPC substrate is disposed so as to pass through the FPC inserting portion and to face the one plane of the base. The FPC substrate includes a signal wiring layer connected to the signal wiring layer of the substrate with a metal wire.

A semiconductor laser module includes a semiconductor laser element that outputs a laser beam, a cathode that is for causing a current to flow through the semiconductor laser element, and a heat sink that dissipates heat generated in the semiconductor laser element. The heat sink includes an anode, a first insulating layer located at a position farther away from the semiconductor laser element than the anode, and a water passage portion located at a position farther away from the semiconductor laser element than the first insulating layer. The water passage portion is formed by metal and includes a part of a flow path of water for dissipation of heat generated in the semiconductor laser element.

The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A light-emitting device includes: a base including: a mount surface, and a lateral wall located around the mount surface, the lateral wall including: a pair of first protrusions located opposite to each other in a first direction which is parallel to a side of the mount surface, and a pair of second protrusions located opposite to each other in a second direction which is perpendicular to the first direction, the second protrusions being provided lower than the first protrusions; one or more light-emitting elements mounted on the mount surface of the base; a first light-transmissive member sealing a space in which the one or more light-emitting elements are mounted; and one or more wires connecting to the one or more light-emitting elements, the one or more wires being bonded on conduction regions provided on at least one of upper surfaces of the second protrusions.

A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.