A manufacturing method of a light-emitting device includes: preparing a mounting substrate having a mounting surface, the mounting substrate including a first metal pattern arranged on a mounting surface side, a second metal pattern arranged on the mounting surface side inward of the first metal pattern in a plan view, and a third metal pattern arranged on the mounting surface side outward of the first metal pattern in the plan view; arranging a light-emitting element over the mounting surface of the mounting substrate; applying a bonding material to the first metal pattern; and joining a sealing member to at least the first metal pattern of the mounting substrate via the bonding material, the sealing member including a fourth metal pattern with a width greater than or equal to a width of the first metal pattern.

A thermo-optical ground plane includes a plate configured to mount a diode laser device defining a first surface area, an evaporation chamber in thermal communication with the plate, and a channel defined in thermal communication with the evaporation chamber. The channel is configured to receive and circulate a coolant fluid at a predetermined flowrate. The evaporation chamber is configured to receive a working fluid. The inner walls of the evaporation chamber define a second surface area that is greater than the first surface area of the diode laser device. The plate comprises beam shaping and folding optics for collimating and focusing the light from the diode laser device on an optical fiber. Light from a plurality of thermo-optical ground planes is combined on a single optical fiber. The structure enables cooling with exceptionally low coolant flowrate while also maintaining small specific volume and small specific weight.

A light emitting device includes a submount, a semiconductor laser device, and a base supporting the submount. The submount includes a graphite layer having upper and lower surfaces extending in first and second directions orthogonal to each other and a support layer having upper and lower surfaces extending in the first and second directions. The graphite layer includes a plurality of graphene structures layered in the first direction. Each of the plurality of graphene structures extends in the second direction. The support layer is thicker than the graphite layer. The upper surface of the support layer supports the lower surface of the graphite layer. The semiconductor laser device emits laser light through an end surface in the first direction. The semiconductor laser device includes a waveguide that extends in the first direction and is supported by the upper surface of the graphite layer.

A semiconductor laser module that includes a package accommodating therein a plurality of optical components, includes: a semiconductor laser device that emits laser light toward one end side in the package; an optical fiber having an incident end of the laser light on another end side in the package, the another end being in an opposite direction of an emission direction in which the semiconductor laser device emits the laser light; and a turn-back unit that turns back the laser light toward the another end side in the package, the another end being in the opposite direction of the emission direction in which the semiconductor laser device emits the laser light, and outputs the laser light to the incident end of the optical fiber.

A structure for cooling a semiconductor element includes an element body and a lead terminal extending from one surface of the element body in a direction intersecting the one surface. The semiconductor element cooling structure includes a heat sink. The heat sink includes a contact surface that is in contact with the one surface of the element body, a through-hole which is formed in the contact surface and through which the lead terminal passes, and a space portion that communicates with the through-hole and that is configured to house a substrate connected to the lead terminal.

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

The invention relates to a method for producing a semi-conductor laser arrangement, in which a first laser diode chip is arranged on a first intermediate support. A second laser diode chip is arranged on a second intermediate support. The second laser diode chip with the second intermediate support is arranged on the first intermediate support, the second intermediate support being arranged on a side of the second laser diode chip facing away from the first intermediate support. The invention furthermore relates to a semi-conductor arrangement.

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

A method includes providing a first plate for a front wall that defines a front surface of a recess to accommodate a laser diode, a second plate for a rear wall that defines a rear side of the recess, and a third plate for a main body that defines an upper side and lateral sides of the recess and is connected to the front wall and the rear wall. The third plate has through-holes arranged in a first direction and in a second directions orthogonal to the first direction. The plates are bonded together to produce a stacked body. The stacked body is cut along the first direction and the second direction to produce a plurality of caps from the stacked body. When cutting the stacked body along the first direction, a first incision is made along inner wall surfaces of through-holes adjacent along the first direction.