A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.

A metal stem includes a cylindrical portion in which an FPC inserting portion is formed, and a base standing upright from one plane of the cylindrical portion. A tubular lens cap with one open end is fixed to a peripheral portion of the one plane of the cylindrical portion, and has a lens mounted on a bottomed portion. A substrate mounted on one plane of the base includes a signal wiring layer and a ground wiring layer. An optical semiconductor element is mounted on the substrate and has a signal terminal connected to the signal wiring layer of the substrate, and a ground terminal connected to the ground wiring layer of the substrate. An FPC substrate is disposed so as to pass through the FPC inserting portion and to face the one plane of the base. The FPC substrate includes a signal wiring layer connected to the signal wiring layer of the substrate with a metal wire.

A Peltier effect heat transfer system (208) comprising: a plurality of heat transfer elements (301-308); wherein each heat transfer element (301-308) comprises at least one semiconductor element pair arranged to yield Peltier effect heat transfer, each semiconductor element pair comprising a P-doped semiconductor element (408) and an N-doped semiconductor element (410); and the heat transfer elements (301-308) are independent such that each heat transfer element (301-308) can be activated so as to yield Peltier effect heat transfer independently of each other heat transfer element (301-308).

A transistor outline package is provided that includes a header with a mounting area for an optoelectronic component. The header has a signal pin disposed in a feedthrough. The feedthrough is filled with an insulating material made of glass and/or glass ceramic. The feedthrough has a recessed area on at least one side that is not completely filled up with the insulating material. The recessed area defines a cavity at least partially around the signal pin and the signal pin has an enlarged portion in the recessed area.

A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Disclosed herein are embodiments of a vertical external cavity surface emitting laser (VECSEL) device that utilizes an external micromirror array, and methods of fabricating and using the same. In one embodiment, a VECSEL device includes a gain chip, a mirror, and a micromirror array. The gain chip includes a gain medium. The micromirror array includes a plurality of curved micromirrors. The micromirror array and the mirror define an optical cavity, and the micromirror array is oriented such that at least one of the curved micromirrors is to reflect light generated by the gain medium back toward the gain medium along a length of the optical cavity.

A thermal stabilization system for a packaged diode laser. An outer thermoelectric cooler (TEC) stabilizes the temperature of the laser package and an inner TEC stabilizes the temperature of the laser diode element of the packaged laser. The inner and outer TECs may be controlled by electronics which is also stabilized in temperature, for example using resistive heating. The packaged laser may be mounted on a heat spreader mounted on the outer TEC and may be surrounded by an insulated covering on all sides other than the surface mounted on the heat spreader. There may also be a thermally conductive cap over the packaged laser, with the insulation arranged outside the cap if both are present.

Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.