A visible light source includes a substrate, a vertical-cavity surface-emitting laser including an active semiconductor region configured to emit infrared light and a first reflector configured to reflect the infrared light emitted by the active semiconductor region, a second reflector configured to reflect the infrared light and form a vertical cavity for the infrared light with the first reflector, and one or more micro-resonators configured to receive the infrared light and generate visible light in one or more colors using the infrared light through optical parametric oscillation. The visible light source also includes one or more output couplers configured to couple the visible light in one or more colors from the one or more micro-resonators into free space or into a photonic integrated circuit.

A light-emitting component includes a substrate, plural light-emitting elements that are disposed on the substrate and emit light in a direction intersecting with a surface of the substrate, and a gate electrode that is electrically connected to each of the plural light-emitting elements and performs control so that the plural light-emitting elements are switched ON/OFF together. Plural holes are disposed around each of the plural light-emitting elements.

An optical waveguide structure includes a lower cladding layer positioned on a substrate; an optical guide layer positioned on the lower cladding layer; an upper cladding layer positioned on the optical guide layer; and a heater positioned on the upper cladding layer. The lower cladding layer, the optical guide layer, and the upper cladding layer constitute a mesa structure. The optical guide layer has a lower thermal conductivity than the upper cladding layer. An equation “W.sub.wg≤W.sub.mesa≤3×W.sub.wg” is satisfied, wherein W.sub.mesa represents a mesa width of the mesa structure, and W.sub.wg represents a width of the optical guide layer. The optical guide layer occupies one-third or more of the mesa width in a width direction of the mesa structure.

A laser diode drive system for generating a drive current for a laser diode is described. The laser diode drive system comprises a first laser diode driver connected to the laser diode by a first cable to provide a drive current source for the laser diode. A second laser diode driver is then connected to the laser diode by a second cable to provide a low current sink for the laser diode. A feedback control loop is employed to provide a feedback signal for the second laser diode driver from to sample of an output field of the laser diode. The laser diode drive system exhibits low power consumption while being capable of creating sufficient feedback bandwidth to reduce the excess optical noise by at least an order of magnitude at 1 MHz compared with laser diode drive systems comprising just a first laser diode driver.

An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously.

Furthermore, a method for producing an optoelectronic component (1) is specified.

A surface emitting laser element array includes multiple two-dimensionally arranged surface-emitting laser element groups each including multiple surface-emitting laser elements. The multiple surface-emitting laser element groups are drivable independently of each other. The multiple surface-emitting laser element groups are arranged in an arrangement region such that the number of surface-emitting laser element groups arranged in a first direction is larger than the number of surface-emitting laser element groups arranged in a second direction perpendicular to the first direction. An irradiation region irradiated with light emitted from the multiple surface-emitting laser element groups has a shape elongated in the first direction. The arrangement region in which the multiple surface-emitting laser element groups are arranged has an aspect ratio closer to 1:1 than the irradiation region.

A laser system for generating a narrow linewidth semiconductor light beam includes a substrate, a gain chip affixed on the substrate and configured to amplify light beam, and an optical feedback photonic chip affixed on the substrate, optically coupled to the gain chip, and configured to output light beam, which has a narrow linewidth around a resonant frequency of the optical feedback photonic chip, to the gain chip.

A light emitting device includes light emitting elements that are arranged on a front surface of a substrate and emit light, a first electrode that is connected to a first line controlling light emission of a light emitting element included in a first light emitting element group, and a second electrode that is connected to a second line controlling light emission of a light emitting element included in a second light emitting element group, in which the first line is provided through a space above the light emitting element of the second light emitting element group, and a position at which the first electrode is disposed with respect to a center of the light emitting element and a position at which the second electrode is disposed with respect to a center of the light emitting element are different from each other.

A pulsed laser diode array driver includes an inductor having a first terminal configured to receive a source voltage, a source capacitor coupled between the first terminal of the inductor and ground, a bypass capacitor connected between a second terminal of the inductor and ground, a bypass switch connected between the second terminal of the inductor and ground, a laser diode array with one or more rows of laser diodes, and one or more laser diode switches, each being connected between a respective row node of the laser diode array and ground. The laser diode switches and the bypass switch are configured to control a current flow through the inductor to produce respective high-current pulses through each row of the laser diode array, each of the high-current pulses corresponding to a peak current of a resonant waveform developed at that row of the laser diode array.

Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.