Systems and methods here may include improved tunable lasers having a tunable filter and a tunable channel selector that can control precisely the wavelength and the bandwidth of the light emitted by the laser, while suppressing light that may otherwise be emitted by the laser outside the desired wavelength and bandwidth with unidirectional ring lasers having a resonator of which forms a ring and where light propagates only in one of the two possible directions.

An optical sensor package includes an emitter die mounted to an upper surface of a package substrate. A sensor die is mounted to the upper surface of the package substrate using a film on die (FOD) adhesive layer that extends over the upper surface and encapsulates the emitter die. The sensor die is positioned in a stacked relationship with respect to the emitter die such that a light channel region which extends through the sensor die is optically aligned with the emitter die. Light emitted by the emitter die passes through the light channel region of the sensor die. The emitter die and the sensor die are each electrically coupled to the package substrate.

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.

An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

A laser diode drive system for generating a drive current for a laser diode is described. The laser diode drive system comprises a first laser diode driver connected to the laser diode by a first cable to provide a drive current source for the laser diode. A second laser diode driver is then connected to the laser diode by a second cable to provide a low current sink for the laser diode. A feedback control loop is employed to provide a feedback signal for the second laser diode driver from to sample of an output field of the laser diode. The laser diode drive system exhibits low power consumption while being capable of creating sufficient feedback bandwidth to reduce the excess optical noise by at least an order of magnitude at 1 MHz compared with laser diode drive systems comprising just a first laser diode driver.

An optoelectronic component (1) is specified having: an optoelectronic semiconductor chip (2) which generates electromagnetic radiation during operation, and a metallic layer (3) which is arranged on the semiconductor chip (2), wherein an outer surface of the metallic layer (4) has a structuring (5), identification of the component (1) is made possible by means of the structuring (5), and the metallic layer (3) is formed continuously.

Furthermore, a method for producing an optoelectronic component (1) is specified.

A light emitting device includes: a base having a bottom face and a lateral part surrounding the bottom face and extending upwards from the bottom face, wherein the lateral part comprises a first stepped portion and a second stepped portion facing the first stepped portion; a first semiconductor laser element disposed on the bottom face and located between the first stepped portion and the second stepped portion in a top view, wherein the first semiconductor laser element is configured to emit light towards the second stepped portion; a first wiring region located on the first stepped portion; and one or more first wires, each having a first end that is connected to the first wiring region. At least one of the one or more first wires is electrically connected to the first semiconductor laser element.

A layered structure includes a first layer being a single material and a cavity coupled to the first layer. The first layer includes a porous region to form a first distributed Bragg reflector (DBR). The porous region includes alternating first porous and second porous sublayers of the single material to form the first DBR. The cavity includes an active region to generate radiation, detect radiation, or both. Advantageously, the layered structure and method of forming the layered structure improves the speed of manufacturing DBRs, reduces strain in the layered structure, reduces the size of the layered structure, and increases throughput.

A pair of optical components is used in an isolator that enables electric isolation. Each of the optical components includes: first lens portions arranged on different optical paths and transmitting light in a first direction; second lens portions arranged on different optical paths and transmitting light in the second direction orthogonal to the first direction; and a reflection portion reflecting, in the second direction, the light in the first direction transmitted through the first lens portion and guiding the light to the second lens portion, or reflecting, in the first direction, the light in the second direction transmitted through the second lens portion and guiding the light to the first lens portion The second lens portion included in one of the pair of optical components and the second lens portion included in the other optical component are spaced apart from each other and face each other.