A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

Provided in a method of fabricating an optical element array including providing a silicon substrate, providing a first element layer on the silicon substrate, the first element layer including a plurality of passive optical elements, providing a plurality of semiconductor blocks on a compound semiconductor wafer, providing semiconductor dies by dicing the compound semiconductor wafer by the plurality of semiconductor blocks, and providing a second element layer by providing the semiconductor dies on the first element layer, each of the plurality of semiconductor blocks contacting at least one corresponding passive optical element from among the plurality of passive optical elements.

A surface emitting laser includes a substrate, a mesa of semiconductor layers including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer that are successively laminated on the substrate, and an electrode provided on the upper contact layer. The upper contact layer includes GaAs. The electrode includes an alloy layer including Pt, in contact with the upper contact layer.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

Apparatuses, systems, and associated methods are described that provide an optical device with sealed optoelectronic component(s) without impacting effective optical performance of the optical device. An example optical device includes a substrate that defines a first surface and a second surface opposite the first surface. The optical device further includes an optoelectronic component supported by the first surface of the substrate where the optoelectronic component operates with optical signals. The optical device further includes a conformal coating applied to the first surface of the substrate such that at least a portion of the conformal coating is disposed on the optoelectronic component. The conformal coating substantially seals the optoelectronic component from an external environment of the optical device without impacting effective optical performance of the optical device. A thickness of the conformal coating may be determined based upon one or more operating parameters of the optoelectronic component.

A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (Al.sub.xGa.sub.1-x).sub.0.5In.sub.0.5P, the first guide layer consists of (Al.sub.yGa.sub.1-y).sub.0.5In.sub.0.5P, and the second conductivity-type cladding layer consists of (Al.sub.zGa.sub.1-z).sub.0.5In.sub.0.5P, where x, y, and z each denote an Al composition ratio, 0<x−y<z−y is satisfied, and D/L>0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.