A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.

A light emitting device according to the present disclosure includes a substrate, and a columnar structure group formed of a plurality of columnar structures, wherein the plurality of columnar structures includes a plurality of first columnar structures disposed in a light emitting section, and a plurality of second columnar structures disposed in a region other than the light emitting section, the columnar structure group includes a first columnar structure group including the plurality of first columnar structures and a light propagation layer, and a second columnar structure group including the plurality of second columnar structures and an insulating layer, an inter-layer insulating layer configured to cover the columnar structure groups is disposed on the substrate, a conductive layer to be electrically coupled to the first columnar structure group is disposed on the inter-layer insulating layer, a first electrode terminal electrically coupled to the conductive layer is disposed on the inter-layer insulating layer, the first columnar structures are constituted by a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the conductive layer is electrically coupled to the second semiconductor layer, and when viewed from a normal direction of the substrate, the conductive layer and the first electrode terminal overlap the second columnar structure group.

Example embodiments relate to light detection and ranging (lidar) devices or other apparatus that incorporate laser light emitters capable of increased pulse energies and decreased pulse durations. These laser light emitters include a gain medium having two portions to which a pump electrode and a switch electrode, respectively, are coupled. The pump electrode is configured to apply a current through the gain medium that provides energy for lasing and the switch electrode is configured to apply a current through the gain medium that controls a transparency of the second portion of the gain medium. Thus the switch electrode, which controls the timing of emitted light pulses, can be driven by a lower current and thus have shorter pulse widths, rise time, and/or fall times, thereby allowing for shorter, higher-energy laser pulses to be emitted.

To enable downsizing and prevent an adverse effect on distance measurement.

A surface emitting laser device includes a surface emitting section having a plurality of light emitting elements arranged on a substrate, and some of the plurality of light emitting elements are used as light receiving elements.

An optical device is provided that includes at least one optical element, a substrate where a capacitor is arranged and the optical element is disposed thereon, and an interconnection formed on the substrate, with the capacitor and the optical element being electrically connected to each other through the interconnection. The optical device further includes at least one conductive pillar that is larger in height from the substrate than at least than the optical element and is electrically connected to a part of an interconnection. Moreover, an electrode is formed on a surface of each conductive pillar opposite to a surface thereof connected to the part of the interconnection, with the electrode being electrically connected to a circuit board.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

A device includes a substrate, a vertical cavity surface emitting laser (VCSEL) array on top of the substrate, a via through the substrate and the VCSEL array, a first electrode extended from a top of the VCSEL array to a bottom of the substrate, through the via, the first electrode electrically connected to the VCSEL array, a second electrode on the bottom of the substrate, the second electrode electrically connected to the VCSEL array, and an isolator in the via providing electrical isolation between the first electrode and the second electrode.

A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.