H01S5/06821

Self-Injection Locking Using Resonator On Silicon Based Chip
20220006260 · 2022-01-06 ·

Disclosed are devices, methods, and systems for controlling output of a laser. An example device can comprise a first portion comprising a gain element and a second portion comprising a silicon material. The second portion can comprise a waveguide configured to receive light from the gain element, an optical resonator configured to at least partially reflect light back to the gain element via the waveguide, and a first tuning element configured to tune a resonant frequency of the optical resonator.

Compact highly-stable synthesized RF sources using self mode-locked beat-notes of multi-modes lasers
11791608 · 2023-10-17 · ·

Low phase noise signal generated in a small structure is required for communication and high-resolution imaging. A DBR based multi-mode laser is combined with mode-locking method to build frequency stabilized and tunable RF signal generator. The number of the output modes from each laser is adjusted using reflecting bandwidth of distributed Bragg reflector and electro-absorption (EA) modulator for amplitude control, while the phase section in integrated laser system provides frequency tuning. Mode-locking of 60 laser modes results in a highly frequency stable 10 GHz RF beat-notes with a calculated phase noise of −150 dBc/Hz at 10 kHz offset frequency.

Laser system and electronic device manufacturing method
11804697 · 2023-10-31 · ·

A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes a plurality of first semiconductor lasers configured to perform continuous wave oscillation in a single longitudinal mode with different wavelengths, a first spectrum monitor, and a first beam combiner. The control unit controls an oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first semiconductor lasers to obtain an excimer laser beam having at least a target center wavelength or a target spectral line width instructed by an external device.

Structured optical fibre sensor integrating a tunable vernier effect laser emission device

The invention is concerned with a structured optical fibre sensor, comprising a light source (1), a detection system (2) and a Bragg grating optical fibre (3) connected to said source and said system. The light source is a wavelength-tunable laser emission device (1) comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R.sub.1, R.sub.2, R.sub.N−1, R.sub.N) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

EXTERNAL-CAVITY LASER WITH REDUCED FREQUENCY NOISE
20210336416 · 2021-10-28 ·

A laser for a distributed fiber sensing system may have a frequency discriminator integrated with the laser. The laser may be an external cavity laser, with at least a portion of the laser cavity on a planar lightwave circuit, which also includes the frequency discriminator.

Compact Highly-Stable Synthesized RF Sources Using Self Mode-Locked Beat-Notes Of Multi-Modes Lasers
20210226416 · 2021-07-22 · ·

Low phase noise signal generated in a small structure is required for communication and high-resolution imaging. A DBR based multi-mode laser is combined with mode-locking method to build frequency stabilized and tunable RF signal generator. The number of the output modes from each laser is adjusted using reflecting bandwidth of distributed Bragg reflector and electro-absorption (EA) modulator for amplitude control, while the phase section in integrated laser system provides frequency tuning. Mode-locking of 60 laser modes results in a highly frequency stable 10 GHz RF beat-notes with a calculated phase noise of −150 dBc/Hz at 10 kHz offset frequency.

TUNABLE VERNIER EFFECT LASER EMISSION DEVICE

The invention relates to a wavelength-tunable laser emission device (1), comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (MA) and a tunable spectral filter using the Vernier effect (F). This filter comprises at least three resonant rings (R.sub.1, R.sub.2, R.sub.N-1, R.sub.N) arranged in cascade, each resonant ring integrating a loop mirror with wavelength tunable reflectivity.

STRUCTURED OPTICAL FIBRE SENSOR INTEGRATING A TUNABLE VERNIER EFFECT LASER EMISSION DEVICE

The invention is concerned with a structured optical fibre sensor, comprising a light source (1), a detection system (2) and a Bragg grating optical fibre (3) connected to said source and said system. The light source is a wavelength-tunable laser emission device (1) comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R.sub.1, R.sub.2, R.sub.N−1, R.sub.N) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD
20210194215 · 2021-06-24 · ·

A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes a plurality of first semiconductor lasers configured to perform continuous wave oscillation in a single longitudinal mode with different wavelengths, a first spectrum monitor, and a first beam combiner. The control unit controls an oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first semiconductor lasers to obtain an excimer laser beam having at least a target center wavelength or a target spectral line width instructed by an external device.

Optoelectronic Oscillator Using Monolithically Integrated Multi-Quantum Well Laser And Phase Modulator

A tunable multi-mode laser is configured to generate a multi-mode optical signal at a tuned wavelength. The laser includes a semiconductor optical gain region, a feedback region, and a phase modulation region between the gain and feedback regions. Each of the regions may be monolithically integrated. A feedback loop is coupled to the tunable laser to receive the optical signal and includes at least one delay line. The delay line may also be monolithically integrated. An output of the delay line is fed back to the tunable multi-mode laser in order to provide at least one of self-injection locking and self-phase locked looping for the multi-mode tunable laser. Each of the optical gain region and phase modulation region of the laser is biased by the output of the delay line in order to reduce phase drift of the optical signal.