A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

The present disclosure provides an oxide-confined semiconductor laser having high aluminum content and a fabricating method. The semiconductor laser includes: an N-side metal electrode, an N-type GaAs substrate, an N-type confinement layer, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type confinement layer, a P-type high aluminum content layer, a P-type contact layer, and a P-side metal electrode. The P-type high aluminum content layer and the P-type contact layer are etched to form a ridge structure. The P-type high aluminum content layer is oxidized to form an oxidation confinement layer. The oxidation confinement layer is between an upper surface of the P-type confinement layer and a lower surface of the P-type contact layer, and covers both sides of the ridge structure, so as to form a current injection channel below the ridge structure and an electrical isolation on the both sides of the ridge structure.

A semiconductor optical integrated device in which a forward-bias optical device and a semiconductor laser are monolithically integrated on a semiconductor substrate, includes: a passive waveguide portion that is arranged between the forward-bias optical device and the semiconductor laser; and a ground electrode that is arrange on a lower surface of the semiconductor substrate. Further, the semiconductor laser includes a mirror having a length on a side closer to the forward-bias optical device, the forward-bias optical device includes a forward-bias optical-device electrode on a side opposite to a side in contact with the semiconductor substrate, the passive waveguide portion includes a passive waveguide electrode on a side opposite to a side in contact with the semiconductor substrate, and the passive waveguide electrode is electrically connected to the ground electrode.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

One aspect of the invention relates to a distributed feedback light source (101) comprising a stack of layers (103) extending in parallel to a substrate (102), the source (101) also comprising a first metal layer (111) extending between the substrate (102) and the stack (103).

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A high-speed directly modulated semiconductor laser device and a preparation method therefor. The semiconductor laser device includes an optical waveguide and an optical grating, which is formed by means of a one-step etching process, wherein the optical grating includes a first optical grating portion and a second optical grating portion, which are arranged side by side. The first optical grating portion and the second optical grating portion can effectively control a lasing wavelength and a photon-photon resonance frequency, and generate a load mismatch resonance effect, such that a relatively high yield can be realized while effectively improving the modulation bandwidth of the directly modulated semiconductor laser device, and an FP cavity is prevented from being formed from the reflection of front and rear end faces of the laser device, and thus multi-longitudinal-mode oscillation generated by the laser device at a high temperature or low temperature is prevented.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

High-power, integrated optical amplifiers are described in which gain waveguides of the amplifiers are designed to improve power performance by reducing power saturation effects in the amplifier. The gain waveguides can change, in at least one aspect, along the length of the gain waveguide to reduce gain saturation. Multi-mode optical beams and/or multi-stage amplification can also be employed to reduce gain saturation.

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a semiconductor substrate layer; an N-type waveguide structure arranged on the semiconductor substrate layer; and an active layer arranged on a surface of the N-type waveguide structure on a side away from the semiconductor substrate layer. The N-type waveguide structure includes a first N-type waveguide layer and a second N-type waveguide layer that are stacked. The second N-type waveguide layer is arranged between the first N-type waveguide layer and the active layer. A conduction band level of the first N-type waveguide layer is the same as a conduction band level of the second N-type waveguide layer. A valence band level of the first N-type waveguide layer is lower than a valence band level of the second N-type waveguide layer. The semiconductor structure increases light emitting efficiency.