The invention relates to a light module including a semiconductor laser element emitting a laser beam in a first cone of light, a photoluminescent element, and an optical means for transforming the light coming from the photoluminescent element into an exit light beam. The optical means has a guiding portion arranged to guide at least a portion of the light emitted in the first cone of light into a second cone of light and a device for detection of incident light. The light module comprises a means of deviation designed to deviate the light of the second cone of light toward a third cone of light directed toward the detection device arranged outside of the second cone of light.

The invention relates to a light module including a semiconductor laser element emitting a laser beam in a first cone of light, a photoluminescent element, and an optical means for transforming the light coming from the photoluminescent element into an exit light beam. The optical means has a guiding portion arranged to guide at least a portion of the light emitted in the first cone of light into a second cone of light and a device for detection of incident light. The light module comprises a means of deviation designed to deviate the light of the second cone of light toward a third cone of light directed toward the detection device arranged outside of the second cone of light.

A light-emitting component includes a light-emitting element, a thyristor, and a light-absorbing layer. The thyristor includes a semiconductor layer having a bandgap energy smaller than or equal to a bandgap energy equivalent to a wavelength of light emitted by the light-emitting element. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked. The light-absorbing layer absorbs the light emitted by the light-emitting element.

A layered structure includes a thyristor and a light-emitting element. The thyristor at least includes four layers. The four layers are an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order. The light-emitting element is disposed such that the light-emitting element and the thyristor are connected in series. The thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers.

A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.

A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.

A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.

A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

A non-planarized VCSEL can include: a blocking region over or under an active region, the blocking region having a first thickness; one or more conductive channel cores in the blocking region, the one or more conductive channel cores having a second thickness that is larger than the first thickness, wherein the blocking region is defined by having an implant and the one or more conductive channel cores are devoid of the implant, wherein the blocking region is lateral the one or more conductive channel cores, the blocking region and one or more conductive channel cores being an isolation region; and a non-planarized semiconductor region of one or more non-planarized semiconductor layers over the isolation region. The VCSEL can include a planarized bottom mirror region below the active region and a non-planarized top mirror region above the isolation region, or a non-planarized bottom mirror region below the active region.

A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.