A novel, monolithically integrated mid-IR optical phased array (OPA) structure which eliminates the wafer bonding process to achieve highly efficient surface emitting optical beam steering in two dimensions is disclosed. Since solar energy is about 15-20 times smaller than that at 1.55 μm, mid-IR is more favorable for the atmospheric transmission due to lower solar radiance backgrounds. For the beam steering, thermo-optic phase shifting is used for azimuthal plane beam steering and laser wavelength tuning is used for elevation plane beam steering. The OPA structure disclosed comprises a wavelength-tunable a QCL, a 1×32 splitter, thermo-optic phase-shifters, and sub-wavelength grating emitters. The disclosed OPA provides a low-cost, low-loss, low-power consumption, robust, small footprint, apparatus that may be used with expendable UAV swarms. A LiDAR may be created by monolithically integrating a QCD with the apparatus. Other embodiments are described and claimed.

An external resonance-type laser module includes: a quantum cascade laser; a MEMS diffraction grating including a movable portion capable of swinging around an axis and a diffraction grating portion formed on the movable portion; and a lens. The diffraction grating portion includes a plurality of lattice grooves arranged in a first direction and each of the plurality of lattice grooves extends in a second direction perpendicular to the first direction. The MEMS diffraction grating is disposed such that a normal line of the diffraction grating portion is inclined with respect to an end surface and the first direction is along a lamination direction of a laminated structure when viewed in a direction perpendicular to the end surface. A length of the diffraction grating portion in the first direction exceeds a length of the diffraction grating portion in the second direction.

A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed at least on the semiconductor mesa; and a metal layer formed at least on the cladding layer. A thickness of the cladding layer is thinner in a second region located outside a first region in the width direction of the semiconductor substrate than in the first region of which at least a part overlaps the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate. The metal layer extends over the first region and the second region.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate formed on the semiconductor substrate to include an active layer having a quantum cascade structure and to have a first end surface and a second end surface facing each other in a light waveguide direction; a first electrode; a second electrode; an insulating film continuously formed from the second end surface to a region on a second end surface side of at least one surface of a surface on an opposite side of the first electrode from the semiconductor laminate and a surface on an opposite side of the second electrode from the semiconductor substrate; and a metal film formed on the insulating film to cover at least the active layer when viewed in the light waveguide direction. An outer edge of the metal film does not reach the one surface when viewed in the light waveguide direction.

A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

A quantum cascade laser element includes: a semiconductor substrate; a semiconductor laminate having a first end surface and a second end surface; a first electrode; a second electrode; and an anti-reflection film formed on the first end surface. The semiconductor laminate is configured to oscillate laser light having a center wavelength of 7.5 μm or more. The anti-reflection film includes an insulating film being a CeO.sub.2 film formed on the first end surface, a first refractive index film being a YF.sub.3 film or a CeF.sub.3 film disposed on a side opposite the first end surface with respect to the insulating film, and a second refractive index film formed on the first refractive index film on a side opposite the first end surface with respect to the first refractive index film and having a refractive index of larger than 1.8.

A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.

A laser source (340) that generates an output beam (354) that is directed along a beam axis (354A) that is coaxial with a first axis and orthogonal to a second axis comprises a first frame (356), a laser (358), and a first mounting assembly (360). The laser (358) generates the output beam (354) that is directed along the beam axis (354A). The first mounting assembly (360) couples the laser (358) to the first frame (356). The first mounting assembly (360) allows the laser (358) to expand and contract relative to the first frame (356) along the first axis and along the second axis, while maintaining alignment of the output beam (354) so the beam axis (354A) is substantially coaxial with the first axis. The first mounting assembly (360) can include a first fastener assembly (366) that couples the laser (358) to the first frame (356), and a first alignment assembly (368) that maintains alignment of the laser (358) along a first alignment axis (370) that is substantially parallel to the first axis.

Semiconductor Quantum Cascade Lasers (QCLs), in particular mid-IR lasers emitting at wavelengths of about 3-50 μm, are often designed as deep etched buried heterostructure QCLs. The buried heterostructure configuration is favored since the high thermal conductivity of the burying layers, usually of InP, and the low losses guarantee devices high power and high performance. However, if such QCLs are designed for and operated at short wavelengths, a severe disadvantage shows up: the high electric field necessary for such operation drives the operating current partly inside the insulating burying layer. This reduces the current injected into the active region and produces thermal losses, thus degrading performance of the QCL. The invention solves this problem by providing, within the burying layers, effectively designed current blocking or quantum barriers of, e.g. AIAs, InAIAs, InGaAs, InGaAsP, or InGaSb, sandwiched between the usual InP or other burying layers, intrinsic or Fe-doped. These quantum barriers reduce the described negative effect greatly and controllably, resulting in a QCL operating effectively also at short wavelengths and/or in high electric fields.

A laser apparatus may include: a quantum cascade laser outputting, based on a supplied current, laser light at an oscillation start timing when a first delay time elapses from a current rising timing of the supplied current: an amplifier disposed in a laser light optical path, and selectively amplifying light of a predetermined wavelength to output the amplified laser light to a chamber including a plasma generation region into which a target is fed; and a laser controller controlling a third delay time, from an output timing of a laser output instruction to the current rising timing, to cause a laser light wavelength to be equal to the predetermined wavelength at an aimed timing when a second delay time elapses from the oscillation start timing, based on oscillation parameters including the first delay time, a supplied current waveform, and a device temperature of the quantum cascade laser.