A light detecting element is realized in which a length thereof is reduced in a direction perpendicular to a direction in which light detecting regions are disposed side by side. A light detecting element includes a light detecting surface provided with a plurality of light detecting regions disposed side by side in a first direction and a plurality of wiring regions electrically connected to the plurality of light detecting regions. Of the plurality of wiring regions, a plurality of the wiring regions connected to a plurality of the light detecting regions are provided in an end region that is a region excluding a central region at the light detecting surface.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

A light-emitting device includes: a base including: a mount surface, and a lateral wall located around the mount surface, the lateral wall including: a pair of first protrusions located opposite to each other in a first direction which is parallel to a side of the mount surface, and a pair of second protrusions located opposite to each other in a second direction which is perpendicular to the first direction, the second protrusions being provided lower than the first protrusions; one or more light-emitting elements mounted on the mount surface of the base; a first light-transmissive member sealing a space in which the one or more light-emitting elements are mounted; and one or more wires connecting to the one or more light-emitting elements, the one or more wires being bonded on conduction regions provided on at least one of upper surfaces of the second protrusions.

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

In various embodiments, one or more optical elements are utilized to alter the numerical aperture of a radiation beam received from an optical fiber in order to accommodate the properties of a downstream collimator within a laser delivery head.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting device includes: a plurality of laser elements, each including a light emitting surface; one or more reflectors; a base including: a bottom portion on which the plurality of laser elements and the one or more reflectors are disposed, and a frame portion surrounding the plurality of laser elements in a top view; a cover attached to a top surface of the frame portion; and a lens array that is bonded to the top surface of the cover and includes: a plate-shaped portion, and a plurality of lens-shaped portions protruding upward from the plate-shaped portion, with the plurality of lens-shaped portions integrated into a one-piece body.

A laser package includes: a substrate having an upper surface; a first laser element disposed on the substrate and configured to emit light in a first direction; a first optical member having a lower surface bonded to the upper surface of the substrate, a reflecting surface inclined relative to the lower surface and configured to reflect the light, and an upper surface connected to the reflecting surface, the upper surface of the first optical member being located farther in the first direction than the reflecting surface; and a bonding material disposed on the upper surface of the substrate. The first optical member is bonded to the substrate via the bonding material. In a top view, a portion of the bonding material protrudes from three sides of the upper surface of the first optical member.

The semiconductor laser element includes: a substrate; a first semiconductor layer disposed above a main surface of the substrate; an active layer that is disposed above the first semiconductor layer and generates light; and a second semiconductor layer) disposed above the active layer. In a top view of a front-side end portion of the semiconductor laser element from which the light is emitted, an end surface of the second semiconductor layer includes an inclined portion with respect to an end surface of the first semiconductor layer.