Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

Disclosed is a laser system including a first laser and a second laser. The first laser includes a laser cavity, and a gas phase molecular gain medium disposed in the laser cavity, the gain medium having an absorption band. The second laser is a solid state laser configured to be continuously tunable, with respect to an emission wavelength of the second laser, over the absorption band of the gain medium, and the second laser is tuned to pump rotational vibrational transitions in the gain medium to achieve a rotational population inversion.

A light-emitting device includes a base structure, a light-emitting element, an optical member, and first and second adhesive parts. The first adhesive parts are disposed in first and second regions of a second surface of the base structure. The second adhesive parts are located at both opposite sides of the first adhesive part without being in contact with the first adhesive part. In the top view, a virtual first line segment, which connects two points respectively on the first adhesive parts in the first and second regions, extends across a first surface of the base structure. A virtual line segment, which connects two points respectively on the second adhesive parts at the both opposite sides of the first adhesive part, does not extend across the first surface. A width of the first adhesive part along the line segment is greater than a width of the second adhesive part.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A photonic-device-mounting package has a base having plural mounting portions. Each of the plural mounting portions has a first mounting portion on which a light-emitting device is mounted and a second mounting portion on which an optical component is mounted, the second mounting portion being at a position in a light emission direction of the light-emitting device. The base has a first wall disposed between two mounting portions arranged next to one another in the light emission direction, the first wall having a height larger than the height of the first mounting portion.

A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

There is provided a device to generate an output light. The device comprises a substrate, a quantum well structure (QWS) disposed on the substrate, and a waveguide disposed on the substrate and in contact with the QWS. The QWS has a first layer, a second layer, and a third layer. The second layer is disposed and quantum-confined between the first layer and the third layer. In addition, the second layer is to emit an input light when electrically biased. The input light has an optical field extending outside the QWS and into the waveguide, to optically couple the waveguide with the QWS. The waveguide is to provide an optical resonance cavity for the input light. Moreover, the waveguide has an optical outlet to transmit at least some of the input light out of the waveguide to generate the output light.

A light emitting device includes: at least one semiconductor laser element; a submount; and a base portion having a mounting surface. The submount includes: a first lateral face being located at a side of an exiting lateral surface of the semiconductor laser element, the first lateral face intersecting the upper face of the submount, and the first lateral face being above and separated from the mounting surface; a lower face being set back inside of the submount relative to an edge at which the upper face and the first lateral face intersect in a top view; and a second lateral face being located at the same side as the first lateral face and intersecting the lower face. A portion of a bonding material protrudes from the lower face and extends outward of an edge at which the lower face and the second lateral face intersect.

Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

A system and method of providing a deformed FAC Lens to a multi-emitter diode bar laser system comprised of a lens holder and FAC lens wherein the FAC Lens is deformed so as to offset or compensate for the inherent smile properties present in a multi-emitter diode bar.