A structure can be provided for collimating light from a light source (e.g., vertical cavity surface emitting diodes). The structure can include at least one light source, a pit formed at an output of the at least one light source and a microbead formed in the pit. Microbeads can function as a lens to collimate light emitting from the at least one light source. The structure can provide by forming an array of VCSELs on a substrate, forming a pit in front of each VCSEL of the array of VCSELs, and assembling a microbead in each pit formed in front of each VCSEL. The microbeads can thereby function as lenses to collimate light emitted from the VCSELs.

Focusing optics can include optical elements disposed and bonded in a linear arrangement (linear array) in at least two rows. A transparent bonding agent can secure alignment of the at least two rows of the optical elements. Scattering elements can also be disposed in the transparent polymer to cause light diffusion. Diffused or un-diffused light from a semiconductor laser array can then be caused to pass through the optical element and illuminate a target substrate such as an imaging member in a printing system.

Provided is a light emitting device including: a base material mounted on a wiring substrate; a light emitting element array provided on the base material; a first conductive pattern provided on the surface of the base material, the first conductive pattern including a first facing region connected to the light emitting element array, the first facing region being along a side surface of the light emitting element array and facing to the light emitting element array, and a first extending region extended beyond the first facing region; and penetrating members penetrating the base material from the first conductive pattern to a back surface side of the base material, each penetrating member being connected to the first facing region or the first extending region.

An on-chip miniarray of optically-coupled oxide-confined apertures of vertical cavity surface emitting lasers (VCSELs) is realized by etching holes from the chip surface down to at least one aperture layer. Oxidation of the aperture layer results in electrically-isolated apertures suitable for current injection. The lateral distance between the aperture centers and the shape of the aperture is chosen to result in effective interaction of the neighboring optical modes in the related aperture regions through optical field coupling effect causing the interaction-induced splitting of the wavelengths of the optical modes. At least one aperture has a different surface area due to different spacing of the etched holes. Different aperture sizes result in different wavelengths of the coupled modes. Splitting of the cavity modes in a frequency domain 3-100 GHz extends the modulation bandwidth of the device due to photon-photon interaction effects.

Selective deposition of highly reflective coating and/or anti-reflecting coating over apertures of different VCSELs foiining a miniarray allows stabilizing lasing in a single coherent mode of the array. Most preferably, highly reflective coating covers the largest aperture and stabilizes the fundamental mode of the coherent array. Anti-reflecting coatings can be deposited on at least one other aperture to reduce the photon lifetime and increase the homogeneous broadening of the related resonant wavelength. Consequently broadening of the photon-photon interaction resonances between the cavity modes can be controlled. Such resonance broadening allows control over the shape of the current modulation curve of the miniarray of VCSELs with the frequency maximum defined by the splitting of the cavity modes and the broadening defined by the broadening of the photon resonances. An increase in −3dB modulation bandwidth of the VCSEL miniarray up to at least 70 GHz is possible.

Such miniarray of VCSELs enables efficient coupling of the emitted light to a multimode optical fiber with the efficiency of at least 70%.

A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

An optical device and a light-source device. The optical device includes a first substrate having a first plane and elements, and a second substrate having a second face that faces the first plane. The elements are disposed on the first substrate to emit or receive light in a direction intersecting with the first plane. The second substrate includes lenses disposed to correspond to the elements, and the second substrate extends in a first direction parallel to the second face to contact the first plane. The second substrate has a joint used to determine spacing between the first substrate and the second substrate, and the joint contacts the first substrate with an area smaller than a maximum size of cross-sectional area parallel to the second face of the joint. The light-source device includes the optical device and a driver to drive the optical device.

Packaged light emitter module can provide improved safety features to facilitate sensing the presence of moisture or a mechanical defect such as a crack in a transmissive cover (22) that may result in a safety hazard caused by the emitted light (24) if the defect or other situation is not addressed in a timely manner. Different electrically conductive structures, such as different electrically conductive traces (20, 22), allow monitoring and detection of mechanical defects to be decoupled from monitoring and detection of problems arising from the presence of moisture. The decoupling can allow the respective configuration for each of the electrically conductive structures to be optimized for detection of particular situations that may lead to a safety hazard.

An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.

A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.