A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost.

The present invention relates to an active shunt capacitance cancelling oscillator circuit. Such systems can be used in resonator-based methods, while avoiding impedance distortion and phase shift anomalies.

Examples of increasing yield and operating temperature range of transmitters are disclosed. In one example, a transmitter has an a thin-film bulk acoustic (FBAR) resonator. The transmitter may be a Bluetooth Low Energy (BLE) transmitter. In this example, the FBAR-based BLE transmitter does not require or have a phase locked loop, and does not require or have a crystal reference. The FBAR-based BLE transmitter may have an oscillator with a split capacitor array. The oscillator may be a Pierce oscillator with a split capacitor array. The FBAR-based transmitter and calibration methods described herein provide a greater yield and wider operating range than prior transmitters.

A temperature compensated oscillator circuit includes a first oscillator, a second oscillator, a first divider, a second divider, a frequency ratio circuit, and a temperature compensation circuit. The first divider is coupled to the first oscillator, and is configured to divide a frequency of a first oscillator signal generated by the first oscillator. The second divider is coupled to the second oscillator, and is configured to divide a frequency of a second oscillator signal generated by the second oscillator. The frequency ratio circuit is coupled to the first divider and the second divider, and is configured to determine a frequency ratio of an output of the first divider to an output of the second divider. The temperature compensation circuit is coupled to the frequency ratio circuit and the first oscillator, and is configured to generate a compensated frequency based on the frequency ratio and the first oscillator signal.

A circuit device includes an oscillation circuit that generates an oscillation signal by using a vibrator, a frequency adjustment circuit that adjusts an oscillation frequency of the oscillation circuit based on frequency adjustment data, a temperature sensor circuit that outputs temperature data, an arithmetic operation circuit, and a storage circuit. The arithmetic operation circuit outputs converted temperature data by performing, on the temperature data, conversion processing in which a slope of the converted temperature data with respect to the temperature data in a first temperature range is different from a slope of the converted temperature data with respect to the temperature data in a second temperature range. The storage circuit stores a lookup table representing a correspondence between the converted temperature data and the frequency adjustment data.

An integrated circuit may include oscillator circuitry having a resonator formed from fin field-effect transistor (FinFET) devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. The resonator may be connected in a feedback loop within the oscillator circuitry. The oscillator circuitry may include an amplifier having an input coupled to the sense cells and an output coupled to the drive cells. The oscillator circuitry may also include a separate inductor and capacitor based oscillator, where the resonator serves as a separate output filter stage for the inductor and capacitor based oscillator.

A temperature insensitive oscillator system. The system includes a substrate having a first surface and an opposing second surface, a CMOS device with one or more CMOS circuits attached to the first surface of the substrate, one or more piezoelectric transducers attached to an outer surface of the CMOS device, a voltage-controlled oscillator generating a RF frequency, which is transmitted as a plurality of short pulses to the one or more piezoelectric transducers, and one or more delays and oscillators using resistor and active components arranged alongside the piezoelectric transducers or on the CMOS device such that the voltage-controlled oscillator has minimal dependence on temperature, and has minimal deviation from a programmed frequency.

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

A vibrator device includes a base; and a vibrator element including a quartz crystal vibrator element attached to the base via a first metal bump, in which the first metal bump is disposed on a straight line inclined within a range of +55° to +65° or −65° to −55° with respect to an X axis of the quartz crystal constituting the quartz crystal vibrator element in plan view seen from a direction in which the base and the quartz crystal vibrator element are arranged.

A circuit device includes an oscillation circuit generating an oscillation signal by oscillating a vibrator, a temperature sensor circuit performing an intermittent operation, a logic circuit performing temperature compensation processing based on an output of the temperature sensor circuit, and a power supply circuit supplying power to the oscillation circuit. The oscillation circuit is disposed in a circuit region, the temperature sensor circuit and the logic circuit are disposed in a circuit region, and the power supply circuit is disposed in a circuit region, which is positioned between the circuit region and the circuit region.