An oscillator oscillating a tern hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

An oscillator oscillating a tern hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

An oscillator is comprising a plurality of resonators and a voltage bias circuit that applies voltages to the plurality of resonators. Each of the plurality of resonators has a negative resistance element. In the oscillator, the plurality of resonators are connected in parallel to the voltage bias circuit respectively via separate inductors.

An oscillator is comprising a plurality of resonators and a voltage bias circuit that applies voltages to the plurality of resonators. Each of the plurality of resonators has a negative resistance element. In the oscillator, the plurality of resonators are connected in parallel to the voltage bias circuit respectively via separate inductors.

Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31. Terahertz element 11 is conductively bonded to wiring layer 32.

Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31. Terahertz element 11 is conductively bonded to wiring layer 32.

In an electromagnetic wave generation device including a plurality of electromagnetic wave generation elements, an instantaneous maximum power consumption during an electromagnetic wave generation operation is reduced. Specifically, the electromagnetic wave generation device includes a plurality of electromagnetic wave generation elements that are divided into a plurality of groups, and a control unit that causes the plurality of electromagnetic wave generation elements to oscillate while shifting a timing in units of group. For example, the control unit causes the plurality of electromagnetic wave generation elements to oscillate such that when the number of the plurality of groups is n, an oscillation start timing of the group that performs mth oscillation (m is a natural number equal to or larger than 2 and equal to or smaller than n) is the same timing as or after an oscillation end timing of the group that performs (m−1)th oscillation.

In an electromagnetic wave generation device including a plurality of electromagnetic wave generation elements, an instantaneous maximum power consumption during an electromagnetic wave generation operation is reduced. Specifically, the electromagnetic wave generation device includes a plurality of electromagnetic wave generation elements that are divided into a plurality of groups, and a control unit that causes the plurality of electromagnetic wave generation elements to oscillate while shifting a timing in units of group. For example, the control unit causes the plurality of electromagnetic wave generation elements to oscillate such that when the number of the plurality of groups is n, an oscillation start timing of the group that performs mth oscillation (m is a natural number equal to or larger than 2 and equal to or smaller than n) is the same timing as or after an oscillation end timing of the group that performs (m−1)th oscillation.

An antenna apparatus comprises: a first substrate including an antenna array in which a plurality of active antennas each including an antenna and a semiconductor structure configured to generate or detect an electromagnetic wave are provided, and a wiring electrically connected to the plurality of active antennas; and a second substrate stacked on the first substrate and including a control circuit of the antenna array, wherein the first substrate and the second substrate are bonded at a bonding surface, the control circuit is electrically connected to the antenna array via the wiring, and the control circuit of the second substrate controls oscillations of the plurality of active antennas of the first substrate.

An antenna apparatus that comprises an active antenna including an antenna, a semiconductor structure configured to operate as an oscillator, and at least two power lines configured to give a potential difference to the semiconductor structure, and configured to generate or detect an electromagnetic wave, and a control line electrically connected to one of the at least two power lines and configured to be injected with a signal for controlling a phase of the oscillator in the active antenna is provided.