A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

Radio frequency (RF) mixer circuits having a complementary frequency multiplier module that requires no balun to multiply a lower frequency base oscillator signal to a higher frequency local oscillator (LO) signal, and which has a significantly reduced IC area compared to balun-based frequency multipliers. In one embodiment, the complementary frequency multiplier module includes a complementary pair of FETs controlled by an applied base oscillator signal. The complementary FETs are coupled to a common-gate FET amplifier and alternate becoming conductive in response to the base oscillator signal. The alternating switching of the complementary FETs in response to the opposing phases of the base oscillator signal cause the common-gate FET amplifier to output a higher frequency local oscillator (LO) signal. The LO signal is coupled to the LO input of a mixer or mixer core of a type suitable for use in conjunction with a frequency multiplier.

An embodiment integrated electronic device comprises a mixer module including a voltage/current transconductor stage including first transistors and connected to a mixing stage including second transistors, wherein the mixing stage includes a resistive degeneration circuit connected to the sources of the second transistors and a calibration input connected to the gates of the second transistors and intended to receive an adjustable calibration voltage, and the sources of the first transistors are directly connected to a cold power supply point.

A frequency tripler circuit includes an amplifier to receive a balanced input signal at an input frequency and outputs a balanced signal at a second harmonic of the input frequency. The frequency tripler circuit includes a passive double balanced mixer coupled to an output of the amplifier to receive the balanced signal at the second harmonic and the balanced input signal to generate an output balanced signal having a frequency triple the input frequency.

One or more systems, devices and/or methods of use provided herein relate to a device that can support a signal generation. A current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. Analog inputs and outputs of the DAC and upconverting mixer can be represented as currents, and the DAC can generate a baseband signal. The DAC and upconverting mixer each can comprise switching transistors of the same type, such as p-type metal-oxide semiconductor (PMOS) switching transistors. In one or more embodiments, a current source and a diode-connected transistor can be arranged in parallel in the current-mode signal path, and the current source passes a static current, while the diode-connected transistor passes both a static current and a dynamic current.

The invention discloses a power mixer, radio frequency circuit, device and equipment, and belongs to the technical field of electronics and communication. The power mixer includes a mixer module, which amplifies an analog baseband current signal by a silicon germanium heterojunction bipolar transistor amplifying circuit, and converts a local oscillator voltage signal into a local oscillator current signal by a silicon germanium heterojunction bipolar transistor switching circuit. The silicon germanium heterojunction bipolar transistor switching circuit receives an amplified analog baseband current signal, and mixes the amplified analog baseband current signal and the local oscillator current signal into a radio frequency current signal; and a transformer module, which converts the radio frequency current signal into a radio frequency power signal and then outputs the radio frequency power signal from the power mixer.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

A biasing scheme for a frequency multiplication circuit, and transceiver using LO signals provided by the frequency multiplication circuit are described. A frequency doubler is cascaded with a mixer to provide a mm-wave oscillator signal. The combination provides a frequency triple that of the LO frequency supplied to the frequency doubler from a PLL. A small-sized replica of the frequency doubler is used to determine biasing of transconductance devices of the frequency doubler. A voltage output of the replica is amplified and the difference between the output and a reference voltage is supplied as feedback to the control terminal of the transconductance devices to bias the transconductance devices to near threshold. The biasing is replicated at the frequency doubler to compensate for PVT variations. A PTAT current source tied to the output of the replica regulates an average output current of the frequency multiplication circuit.

A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.