A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Enhanced operational amplifier trim circuitry and techniques are presented herein. In one implementation, a circuit includes a reference circuit configured to produce a set of reference voltages, and a digital-to-analog conversion (DAC) circuit. The DAC circuit comprises a plurality of transistor pairs, where each pair among the plurality of transistor pairs is configured to provide portions of adjustment currents for an operational amplifier based at least on the set of reference voltages and sizing among transistors of each pair. The circuit also includes drain switching elements coupled to drain terminals of the transistors of each pair and configured to selectively couple one or more of the portions of the adjustment currents to the operational amplifier in accordance with digital trim codes.

Methods and apparatus for implementing a power efficient amplifier device through the use of a main (primary) and auxiliary (secondary) power amplifier are described. The primary and secondary amplifiers operate as current sources providing current to the load. Capacitance coupling is used to couple the primary and secondary amplifier outputs. In some embodiments the combination of primary and secondary amplifiers achieve high average efficiency over the operating range of the device in which the primary and secondary amplifiers are used in combination as an amplifier device. The amplifier device is well suited for implementation using CMOS technology, e.g., N-MOSFETs, and can be implemented in an integrated circuit space efficient manner that is well suited for supporting RF transmissions in the GHz frequency range, e.g., 30 GHz frequency range. The primary amplifier in some embodiments is a CLASS-AB or B amplifier and the secondary amplifier is a CLASS-C amplifier.

A power amplification system comprises a current source configured to provide a bias current, a current mirror configured to mirror the bias current, and a comparator configured to compare the mirrored bias current to a threshold current and, in response to the mirrored bias current exceeding the threshold current, cause a reduction of output power.

A common-source differential power amplifier comprises a compensation circuit, which comprises a first and a second compensation transistors and two signal terminals, a source and a drain of the first compensation transistor are short-circuited and connected to a gate of the second compensation transistor and one signal terminal of the compensation circuit, the source and the drain of the second compensation transistor are short-circuited and connected to the gate of the first compensation transistor and the other signal terminal of the compensation circuit, the two signal terminals of the compensation circuit are further respectively connected to two differential signal input terminals of the common-source differential power amplifier directly or via a capacitor, where the first and second compensation transistors in the same compensation circuit are both NMOS transistors or both PMOS transistors. An electronic device including the power amplifier is also disclosed.

A multi-band power amplifier module includes at least one transmission input terminal, at least one power amplifier circuit that receives a first transmission signal and a second transmission signal through the at least one transmission input terminal, a first filter circuit that allows the first transmission signal to pass therethrough, a second filter circuit that allows the second transmission signal to pass therethrough, at least one transmission output terminal through which the first and second transmission signals output from the first and second filter circuits are output, a transmission output switch that outputs each of the first and second transmission signals output from the at least one power amplifier circuit to the first filter circuit or the second filter circuit, and a first tuning circuit that adjusts impedance matching between the at least one power amplifier circuit and the at least one transmission output terminal.

In one embodiment, a switched amplifier is provided to amplify a data transmission. The switched amplifier may use a control signal that is received via a control signal channel in a transmission cable. Also, the switched amplifier may detect signal power to determine whether the data transmission is received at one of a first port and a second port. Data transmissions via the data transmission channel occur in a first direction and a second direction in a same frequency range in a time division multiplex (TDD) mode. Also, the control signal and data transmission are diverted from the transmission cable that transmits a type of signal different from the control signal and the data transmission. The switched amplifier is controlled based on the control signal or the signal power detected. The amplified signal is diverted in the first direction or the second direction via the data transmission channel back to the transmission cable.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

A reconfigurable amplifier includes a first transistor having a gate coupled to an input of the reconfigurable amplifier, and a source coupled to a ground. The reconfigurable amplifier also includes a gate control circuit, and a second transistor having a gate coupled to the gate control circuit, a source coupled to a drain of the first transistor, and a drain coupled to an output of the reconfigurable amplifier, wherein the gate control circuit is configured to output a bias voltage to the gate of the second transistor in a cascode mode, and output a switch voltage to the gate of the second transistor in a non-cascode mode. The reconfigurable amplifier further includes a load coupled to the output of the reconfigurable amplifier.

The present invention provides a current source comprising a first bias current control element, the first bias current control element being configured to generate a first current if the control value is lower than a reference value and configured to generate a second current if the control value equal to or higher than the reference value. In addition or alternatively the bias current source comprises a second bias current control element, the second bias current control element being configured to generate a third current if the control value is lower than or equal to the reference value and configured to generate a fourth current if the control value is higher than the reference value. Furthermore, the present invention provides an integrated circuit and a method.