Embodiments of Doherty Power Amplifier (PA) and other PA packages are provided, as are systems including PA packages. In embodiments, the PA package includes a package body having a longitudinal axis, a first group of input-side leads projecting from a first side of the package body and having an intra-group lead spacing, and a first group of output-side leads projecting from a second side of the package body and also having the intra-group lead spacing. A first carrier input lead projects from the first package body side and is spaced from the first group of input-side leads by an input-side isolation gap, which has a width exceeding the intra-group lead spacing. Similarly, a first carrier output lead projects from the second package body side, is laterally aligned with the first carrier input lead, and is separated from the first group of output-side leads by an output-side isolation gap.

A power amplifier arrangement (200) for amplifying an input signal to produce an output signal comprises a plurality N of amplifier sections (212, 213), a first input transmission line (221) comprising multiple segments and a first output transmission line (231) comprising multiple segments. Each amplifier section comprises one or more first transistors (T1) distributed along the first input transmission line (221) and the first output transmission line (231). Each amplifier section is configured to amplify a portion of the input signal to produce a portion of the output signal. A portion of the input signal is one of N portions of the input signal partitioned on any one or a combination of an amplitude basis and a time basis. The output signal is produced at an end of the first output transmission line (231) by building up N potions of the output signal from each amplifier section.

A transmitting and receiving device having a module (GSZ) with a configurable HF high-power amplifier (HPA) that includes a main power amplifier (DM) with a main amplifier core and at least one peak power amplifier (DP1) having an auxiliary amplifier core. A switching element connected to inputs of the main power amplifier and the at least one peak power amplifier is connected to a digital input signal divider (ET) having a plurality of outputs and an output combiner (C) is connected to outputs of the amplifier cores for the main power amplifier and the at least one peak power amplifier. A multi-harmonic transformation line (LAH) is connected at the amplifier core output of the main power amplifier and at the amplifier core output of the at least one peak power amplifier, and a circulator (Z1) is connected to the output of the output combiner or an impedance converter (AN1).

Methods and apparatus for implementing a power efficient amplifier device through the use of a main (primary) and auxiliary (secondary) power amplifier are described. The primary and secondary amplifiers operate as current sources providing current to the load. Capacitance coupling is used to couple the primary and secondary amplifier outputs. In some embodiments the combination of primary and secondary amplifiers achieve high average efficiency over the operating range of the device in which the primary and secondary amplifiers are used in combination as an amplifier device. The amplifier device is well suited for implementation using CMOS technology, e.g., N-MOSFETs, and can be implemented in an integrated circuit space efficient manner that is well suited for supporting RF transmissions in the GHz frequency range, e.g., 30 GHz frequency range. The primary amplifier in some embodiments is a CLASS-AB or B amplifier and the secondary amplifier is a CLASS-C amplifier.

Systems, methods, and devices relate to tunable baluns for multimode power amplification. For example, a variable-gain amplification system can include a power amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable balun circuit configured to receive the amplified signal from the power amplifier and to provide an output signal. The tunable balun circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.

A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

An amplifier that is configured to amplify an RF signal includes a power combiner circuit. The power combiner circuit includes a first branch connected between a first RF input port and a summing node and a second branch connected between a second RF input port and the summing node. Each of the first and second branches includes an impedance inverter. The Chireix combiner is configured to present a Chireix load modulated impedance response to the first and second RF input ports. The power combiner circuit further includes compensation elements being configured to at least partially compensate for a reactance of the Chireix combiner circuit in a Doherty amplifier mode in which a signal is applied to the first RF input port and the second RF input port is electrically open.

In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 Ohm.Math.cm, a front surface and a rear surface, an LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate, and a RESURF structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.

An amplifier arrangement comprises N amplifier stages, wherein N is an integer equal or greater than four. The amplifier arrangement comprises a cascade of quarter wavelength transmission lines coupled between an output of an amplifier of a first amplifier stage and an output node of the amplifier arrangement, wherein the cascade comprises N−1 quarter wavelength transmission lines. An amplifier of the Nth stage is coupled to the output node, and remaining amplifiers between the first and Nth stages coupled to successive junctions in the cascade of quarter wavelength transmission lines. The amplifier arrangement is further configured such that the amplifier of the Nth stage is coupled to the output node via a connecting quarter wavelength transmission line, and whereby each of the remaining amplifiers of the N−2 stages closest to the output node is coupled by a respective connecting quarter wavelength transmission line to a respective junction of the cascade of quarter wavelength transmission lines.

A transistor package according to one exemplary embodiment includes main transistors and a sub-transistor placed in the same package as the main transistors and having a smaller size than the main transistors. It is thereby possible to provide a transistor package with more versatility capable of forming various types of Doherty amplification circuits such as a Doherty amplification circuit with auto-biasing function and an extended Doherty amplification circuit with desired operating characteristics, an amplification circuit including the same, and a method of forming a transistor.