The present invention relates generally to the field of electret capsule, and more particularly to a circuit configuration of an impedance converter integrated in an electret capsule such as for use in condenser microphones. The electret capsule of a microphone may include a gate biasing field effect transistor (FET) to facilitate biasing of a low noise FET. Advantageously, the use of low noise FET in the electret capsule of a microphone provides for a reduced cost, while achieving lower self-noise.

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.

An internal voltage offset between a positive input and a negative input of a first operational amplifier is compensated. The negative input and the positive input of the first operational amplifier are coupled at the same voltage level. A comparison current generated at an output of the first operational amplifier has a sign that is representative of a sign of the internal voltage offset. The output of the first operational amplifier is biased to a threshold voltage using a current-to-voltage converter. A control voltage is generated from a sum of the threshold voltage and a voltage conversion of the comparison current. Compensation for the internal voltage offset between the positive and negative inputs of the first operational amplifier is made dependent on the control voltage.

Aspects of the description provide for a circuit. In some examples, the circuit includes a input pair of transistors, a bias transistor having a bias transistor gate, a bias transistor drain, and a bias transistor source, the bias transistor drain coupled to the input pair of transistors and the bias transistor source coupled to ground, and a resistor coupled between the bias transistor gate and the input pair of transistors.

A transimpedance amplifier system (TIA) for stabilizing high gain and high frequency signals while minimizing parasitic capacitance effects on the transimpedance amplifier system. The TIA includes an operational amplifier having a first input terminal, a second input terminal, and an output terminal. The TIA also includes a signal generating device operatively connected with the first input terminal of the operational amplifier. The TIA also includes a T-network feedback architecture operatively connected with the operational amplifier at the first input terminal of the operational amplifier and the output terminal of the operational amplifier. The T-network feedback architecture has a first impedance network and a second impedance network. The T-network feedback architecture is configured to suppress parasitic capacitance from the transimpedance amplifier system.

An amplifier includes a first stage and a second stage. The first stage is configured to amplify a received signal. The second stage is coupled to the first stage. The second stage includes a source follower and a compensation network. The source follower includes an input and an output. The compensation network is coupled to the input of the source follower and the output of the source follower. The compensation network is configured to modify a magnitude and phase response of the first stage based on a load capacitance coupled to the output of the source follower.

A shaper circuit includes a first amplifier including an input and an output, the input being configured to receive an input signal, which includes one or more current pulses, a feedback component coupled to the output and to the input of the first amplifier thereby forming a feedback loop of the first amplifier, and an RC component coupled to the output of the first amplifier and to a reference potential terminal. Therein the shaper circuit is configured to provide an output signal as a function of the input signal, the output signal including one or more voltage pulses, and the RC component is configured to largely cancel a low frequency pole of the feedback loop of the first amplifier.

Aspects of the description provide for a circuit. In some examples, the circuit includes a input pair of transistors, a bias transistor having a bias transistor gate, a bias transistor drain, and a bias transistor source, the bias transistor drain coupled to the input pair of transistors and the bias transistor source coupled to ground, and a resistor coupled between the bias transistor gate and the input pair of transistors.

A circuit an amplifier stage that amplifier stage includes a positive amplifier branch and a negative amplifier branch and has current flow paths therethrough cascaded in a flow line for a core current for the amplifier stage between a supply node and a ground node. The positive and negative amplifier branches have respective input nodes configured to receive an input signal applied therebetween. A current mirror loop can be coupled to the respective input nodes of the positive and negative amplifier branches and provides an adjustable high-impedance bias source for the core current for the amplifier stage. In addition to, or instead of the current mirror loop, the circuit can include stability network having a gain bandwidth range. The amplifier stage is configured to short-circuit the output signal from the amplifier stage within the gain bandwidth range based on an output voltage setting signal.

A power amplifier circuit includes a first carrier amplifier and a first peak amplifier. The first carrier amplifier includes a differential amplifier circuit having first and second transistors. The first peak amplifier is formed in or on a semiconductor substrate, which is the same semiconductor substrate in or on which the first carrier amplifier is formed. The emitter or the source of the first transistor is electrically connected to the emitter or the source of the second transistor. The emitter or the source of the first transistor is electrically connected to a ground electrode via a first bump. The emitter or the source of the second transistor is electrically connected to the ground electrode via a second bump. The second bump is different from the first bump.