An electronic device including an amplifier which includes a first transistor configured to receive an input signal through a gate terminal thereof and having a source terminal electrically connected to ground, a second transistor configured to transmit an output signal through a drain terminal thereof and having a gate terminal electrically connected to the ground, and a switch electrically connected to the gate terminal of the second transistor and configured to switch a voltage being supplied to the gate terminal of the second transistor in accordance with turn-on or turn-off of the amplifier.

A high CMRR neural signal amplifier is configured for supply rail common mode feedback (SR-CMFB) whereby a set of CMFB signals is provided to supply rails of front end LNAs. High CMRR is maintained through buffering outputs of front end signal LNAs and a reference LNA coupled to signal and reference inputs of second stage amplifiers, respectively; and buffering the reference LNA output using an active/guard buffer pair, whereby across a plurality of distinct multiplexing time intervals, during each multiplexing time interval one buffer of the pair functions as an active buffer that drives second stage amplifier reference inputs corresponding to second stage amplifier outputs being multiplexed to a set of multiplexor outputs, and the other buffer of the pair functions as a guard buffer coupled to other second stage amplifier reference inputs corresponding to second stage amplifier outputs not being multiplexed to the set of multiplexor outputs.

An amplifier includes a first circuitry, a second circuitry, and a plurality of amplifier circuitries. The first circuitry controls an enable signal. The second circuitry controls a bias signal. Circuitries which output signals are decided from among the plurality of circuitries based on the enable signal, and each of the circuitries which output the signals amplifies an input signal with a gain corresponding to the bias signal.

An RF amplifier to increase a gain using a transformer is provided. The amplifier includes: a first transistor configured to generate a current by amplifying and converting an input voltage; a second transistor configured to amplify the generated current; and a first transformer configured to feed an emitter current of the second transistor back to a gate. Accordingly, G.sub.m of the transistor is boosted using the transformer, such that a high gain can be obtained with a low current. Therefore, a problem of a gain reduction caused by a parasitic capacitor at a high frequency can be solved.

Apparatuses and methods for adjusting a power capability of a system is described. In an example, a system can include an antenna array and a beamformer connected to the antenna array. The beamformer can include a communication channel. The system can further include a first power converter that can be configured to convert a supply voltage to a first regulated voltage. The first power converter can apply the first regulated voltage to the beamformer. The system can further include a second power converter that can be configured to convert the supply voltage to a second regulated voltage different from the first regulated voltage. The second power converter can apply the second regulated voltage to a power amplifier in the communication channel to adjust a maximum power capability of the power amplifier.

An compensation circuit for an Amplitude Modulation-Amplitude Modulation (AM-AM) of a Radio Frequency (RF) power amplifier, including: a first biasing circuit, a power amplifier, and a compensation circuit located between the first biasing circuit and the power amplifier; herein, the compensation circuit includes a diode detection circuit and a feedforward amplifier for compensating AM-AM distortion.

A cascode structure, an output structure, an amplifier and a driving circuit are provided. A bias voltage of a common-gate structure in the cascode structure is provided by the cascode structure, bias voltages of transistors in the output structure are all provided by the output structure, the amplifier includes the cascode structure and/or the output structure described above, the driving circuit includes the amplifier described above.

A switching amplifier provided, at a minimum, with: a first input transistor into which one of two input signals that operate in a complementary manner is input; a first cascode transistor cascade-connected between the first input transistor and a power supply; a second input transistor into which the other of the two input signals is input; and a second cascode transistor cascade-connected between the second input transistor and the first input transistor; the switching amplifier extracting an output signal, a connection point between the first input transistor and the second cascode transistor being used as an output terminal; wherein a first potential limiting circuit and a second potential limiting circuit for limiting the potential fluctuation range are respectively connected to the input terminal of the first cascode transistor and the input terminal of the second cascode transistor.

An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.