An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a common source input transistor, e.g., input field effect transistor (FET), and the second configured in a common gate configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

A reconfigurable low-noise amplifier (LNA) is disclosed. The reconfigurable LNA includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. The reconfigurable LNA further includes a gamma inverting network (GIN) coupled between the input terminal and the fixed voltage node, wherein the GIN has a first switch configured to disable the GIN during operation at first frequencies within a lower frequency band relative to a higher frequency band and to enable the GIN during operation at second frequencies within the higher frequency band.

A reconfigurable low-noise amplifier (LNA) is disclosed. The reconfigurable LNA includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. The reconfigurable LNA further includes a gamma inverting network (GIN) coupled between the input terminal and the fixed voltage node, wherein the GIN has a first switch configured to disable the GIN during operation at first frequencies within a lower frequency band relative to a higher frequency band and to enable the GIN during operation at second frequencies within the higher frequency band.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a common source input transistor, e.g., input field effect transistor (FET), and the second configured in a common gate configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.

A method and apparatus for a dual-feedback, amplifier limiter for providing a conditioned radio-frequency signal. The dual-feedback, amplifier limiter includes an input that receives a radio-frequency signal and a stacked amplifier including an input node coupled to the input, an output node, a first transistor configured as a common-base amplifier, and a second transistor configured as a common-emitter amplifier. The dual-feedback, amplifier limiter further includes an output coupled to the output node of the stacked amplifier. The output provides the conditioned radio-frequency signal. The dual-feedback, amplifier limiter further includes a radio-frequency feedback circuit coupled to the stacked amplifier. The radio-frequency feedback circuit includes a passive radio-frequency dependent reactive element in series with a radio-frequency feedback circuit resistor. The dual-feedback, amplifier limiter further includes an envelope control feedback circuit coupled to the stacked amplifier and including a current mirror and a reactive element loop filter.

A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first FET including a first gate electrode, a first source, and a first drain, a second semiconductor chip including a second substrate having a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second FET having a second gate electrode, a second source, and a second drain, and a third semiconductor chip including a third substrate having silicon, the third semiconductor chip being formed with a MOSFET including a third gate electrode, a third source, and a third drain. The first semiconductor chip and the second semiconductor chip are mounted over a first chip mounting section, and the third semiconductor chip is mounted over a second chip mounting section.

A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.

The manufacturing yield of a semiconductor device is improved. There is provided a semiconductor device of a cascode coupling system, which is equipped with a plurality of normally-on junction FETs using as a material, a substance larger in bandgap than silicon, and a normally-off MOSFET using silicon as a material. At this time, the semiconductor chip has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) formed with the junction FETs in a divided fashion, and a MOSFET semiconductor chip (semiconductor chip CHP2) formed with the MOSFET.

A reconfigurable low-noise amplifier (LNA) is disclosed. The reconfigurable LNA includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. The reconfigurable LNA further includes a gamma inverting network (GIN) coupled between the input terminal and the fixed voltage node, wherein the GIN has a first switch configured to disable the GIN during operation at first frequencies within a lower frequency band relative to a higher frequency band and to enable the GIN during operation at second frequencies within the higher frequency band.