Patent classifications
H03F1/226
HARMONIC CONTROL-BASED CLASS-J DISTRIBUTED POWER AMPLIFIER AND OPTIMIZATION METHOD THEREOF
Provided are a harmonic control-based class-J distributed power amplifier and an optimization method thereof. The object of the present disclosure aims to solve the problems of low output power, low efficiency and low gain of distributed amplifiers resulting from non-uniform drive states of transistors at different positions and the like in the distributed amplifiers. The harmonic control-based distributed power amplifier includes an input artificial uniform transmission line, an output artificial non-uniform transmission line, and plural gain units. Two ports of the output artificial non-uniform transmission line are respectively connected with reactive terminals, and in each gain unit, a gate electrode of a transistor is connected with an RC parallel resonant circuit. In the present disclosure, based on load pull method and harmonic control technology, a purely reactive terminal network is added in the NDA terminal open-circuit structure.
Composite cascode power amplifiers for envelope tracking applications
Composite cascode power amplifiers for envelope tracking applications are provided herein. In certain embodiments, an envelope tracking system includes a composite cascode power amplifier that amplifies a radio frequency (RF) signal and that receives power from a power amplifier supply voltage, and an envelope tracker that generates the power amplifier supply voltage based on an envelope of the RF signal. The composite cascode power amplifier includes an enhancement mode (E-MODE) field-effect transistor (FET) for amplifying the RF signal and a depletion mode (D-MODE) FET in cascode with the E-MODE FET.
Harmonic control-based class-J distributed power amplifier and optimization method thereof
Provided are a harmonic control-based class-J distributed power amplifier and an optimization method thereof. The object of the present disclosure aims to solve the problems of low output power, low efficiency and low gain of distributed amplifiers resulting from non-uniform drive states of transistors at different positions and the like in the distributed amplifiers. The harmonic control-based distributed power amplifier includes an input artificial uniform transmission line, an output artificial non-uniform transmission line, and plural gain units. Two ports of the output artificial non-uniform transmission line are respectively connected with reactive terminals, and in each gain unit, a gate electrode of a transistor is connected with an RC parallel resonant circuit. In the present disclosure, based on load pull method and harmonic control technology, a purely reactive terminal network is added in the NDA terminal open-circuit structure.
Temperature Compensation of Fabricated Semiconductors
Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.
Amplifier and method for controlling common mode voltage of the same
The present application discloses an amplifier and a method for controlling a common mode voltage thereof. The method includes: generating a control signal according to a positive-terminal input signal, a negative-terminal input signal and a target common mode voltage; and coupling the controlling signal to a first terminal of a positive-terminal capacitor and a first terminal of a negative-terminal capacitor, to adjust degree of conduction of a positive-terminal p-type transistor and degree of conduction of a negative-terminal p-type transistor, or to adjust degree of conduction of a positive-terminal n-type transistor and degree of conduction of a negative-terminal n-type transistor, thereby changing a common mode voltage.
Circuit
A circuit comprising: an input terminal; a first amplifier coupled to the input terminal of the circuit to receive an input signal; a first inductor having a first terminal coupled to the input terminal and a second terminal configured to be coupled to the ground terminal, wherein the first inductor is arranged with a second inductor and configured to magnetically couple therewith, wherein said second inductor is coupled to the first amplifier and is configured to sense a current through the amplifier.
Low noise amplifier and apparatus including the same
A low noise amplifier includes a first input port configured to receive a first input signal, a second input port configured to receive a second input signal, and a first amplifier stage including a first gain stage connected to the first input port and the second input port, and a first drive stage between the first gain stage and a first load circuit. The first gain stage includes a first-first gain block connected to the first input port, a first-second gain block connected to the second input port, and a first degeneration inductor between a ground terminal and a first common node of the first-first gain block and the first-second gain block. The amplifier includes a second amplifier stage including a second gain stage connected to the first input port and the second input port, and a second drive stage between the second gain stage and a second load.