To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit.

A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

The application describes a transimpedance amplifier circuit having a first circuit branch extending between first and second supply nodes. An input NMOS transistor is located in the first circuit branch, with its drain terminal coupled to the first supply node via a load resistor, its source terminal coupled to the second supply node and its gate terminal coupled to an input node for receiving an input signal. The circuit includes a PMOS transistor having its source terminal coupled to a third supply node, its drain terminal coupled to the first circuit branch, at a node in a part of the first circuit branch extending from the drain terminal of the input transistor to the load resistor, and its gate terminal coupled to the input node. A drain current of the PMOS transistor contributes a proportion but not all of a drain current for input NMOS transistor.

A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.

A CMOS trans-impedance amplifier includes an inverting amplifier circuit and a feedback resistor. The inverting amplifier circuit includes an input end and an output end, and the feedback resistor is coupled therebetween. The inverting amplifier circuit includes at least three sequentially-connected amplifier units, and each amplifier unit includes at least three sequentially-connected nFETs, namely an input signal receiving part nFET, an intermediate part nFET and a DC signal receiving part nFET. A common connection terminal of the input signal receiving part nFET and the intermediate part nFET is configured to output an amplified voltage signal.

A circuit for increasing an output direct-current level of a transimpedance amplification stage in a TIA (Trans-Impedance Amplifier) includes a transimpedance amplification stage, a differential amplification stage, a level boosting unit, and a DC-restore loop. An input terminal of the transimpedance amplification stage is used for inputting a photocurrent signal. An output terminal of the transimpedance amplification stage is directly connected to an input terminal of the differential amplification stage.

An amplifier arrangement comprises a sensor input and a first and a second amplifier. The first amplifier has a first amplifier output and a first input connected to a first reference potential terminal and a second input connected to the sensor input in a direct fashion and to the first amplifier output via a feedback path having a switched integration capacitor that is charged by the feedback path during a first switching phase and discharged during a second switching phase. The second amplifier has a second amplifier output, a first input connected to a second reference potential terminal and a second input. A first feedback capacitor is connected in-between two pairs of feedback switches. A second feedback capacitor is connected between the second amplifier output and the second input of the second amplifier. An impedance element is coupled between the second amplifier output and the sensor input.

The disclosure provides an improved transimpedance amplifier (TIA) that can operate at a higher bandwidth and lower noise compared to conventional TIAs. The TIA employs a data path with both feedback impedance and feedback capacitance for improved performance. The feedback impedance includes at least two resistors in series and at least one shunt capacitor, coupled between the at least two resistors, that helps to extend the circuit bandwidth and improve SNR at the same time. The capacitance value of the shunt capacitor can be selected based on both the bandwidth and noise. In one example, the TIA includes: (1) a biasing path, and (2) a data path, coupled to the biasing path, including multiple inverter stages and at least one feedback capacitance coupled across an even number of the multiple inverter stages. An optical receiver and a circuit having the TIA are also disclosed.

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.

The present disclosure relates to a device comprising a first transimpedance amplifier comprising a first amplification stage with a first MOS transistor, a second transimpedance amplifier comprising a second amplification stage with a second MOS transistor, and a current source series-connected with the first and second amplification stages, the current source having a first terminal coupled to the drain of the first MOS transistor and a second terminal coupled to the drain of the second MOS transistor.

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.