A digital radio-frequency (RF) circuitry is disclosed. In one aspect, the circuitry includes a digitally controlled amplifier configured to receive an RF input signal and a digital control signal, and to output an amplitude controlled output signal. The digitally controlled amplifier includes one or more common-source amplifying unit cells. A respective common-source amplifying unit cell includes a sources node connected to a switching circuitry controllable by the digital control signal so as to activate or deactivate the common-source amplifying unit cell. The switching circuitry comprises a first switch configured to connect the source node with a first power supply node and a second switch configured to connect the source node with a second power supply node when activating and deactivating, respectively, the common-source amplifying unit cell.

An amplifier circuit is provided that includes an amplifier having a signal input and a signal output, the amplifier being configured to produce an amplified signal at the signal output, a feedback path coupled between the signal output and the signal input, and an amplifier linearity boost circuit positioned in the feedback path. The amplifier linearity boost circuit includes a non-linear current generator and a phase-shifting circuit, the non-linear current generator being configured to provide a non-linear current based on the amplified signal, and the phase-shifting circuit being configured to adjust a phase of the non-linear current to reduce an intermodulation distortion of the amplified signal.

An amplifier circuit is provided that includes an amplifier having a signal input and a signal output, the amplifier being configured to produce an amplified signal at the signal output, a feedback path coupled between the signal output and the signal input, and an amplifier linearity boost circuit positioned in the feedback path. The amplifier linearity boost circuit includes a non-linear current generator and a phase-shifting circuit, the non-linear current generator being configured to provide a non-linear current based on the amplified signal, and the phase-shifting circuit being configured to adjust a phase of the non-linear current to reduce an intermodulation distortion of the amplified signal.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Herein disclosed in some embodiments is a fault detector for power amplifiers of a communication system. The fault detector can detect a portion of the power amplifiers that are in fault condition and can prevent or limit current flow to the power amplifiers in fault condition while allowing the rest of the power amplifiers to operate normally. The fault detector can further indicate which power amplifiers are in fault condition and/or the cause for the power amplifiers to be in fault condition. Based on the indication, a controller can direct communications away from the power amplifiers in fault condition and/or perform operations to correct the fault condition.

A multi-level voltage circuit and related apparatus are provided. The multi-level voltage circuit is configured to provide an average power tracking (APT) voltage to an amplifier circuit for amplifying a radio frequency (RF) signal, which can be modulated in a number of orthogonal frequency division multiplexing (OFDM) symbols. The RF signal may experience power fluctuations from one OFDM symbol to another and the multi-level voltage circuit may need to adjust the APT voltage accordingly. In examples discussed herein, when the APT voltage needs to increase from a present value to a higher future value at a predetermined effective time, the multi-level voltage circuit may start increasing the APT voltage from the present value toward the future value ahead of the predetermined effective time. As such, it may be possible to ramp up the APT voltage in a timely fashion to help improve linearity and efficiency of the amplifier circuit.

In a Doherty amplifier, outputs of first (main) and second (peak) transistors are connected by a combined impedance inverter and harmonic termination circuit. The harmonic termination circuit incorporates a predetermined part of the impedance inverter, and provides a harmonic load impedance at a targeted harmonic frequency (e.g., the second harmonic). Control of the amplitude and phase of the harmonic load impedance facilitates shaping of the drain current and voltage waveforms to maximize gain and efficiency, while maintaining a good load modulation at a fundamental frequency. Particularly for Group III nitride semiconductors, such as GaN, both harmonic control and output impedance matching circuits may be eliminated from the outputs of each transistor. The combined impedance inverter and harmonic termination circuit reduces the amplifier circuit footprint, for high integration and low power consumption.

A system for split-frequency amplification, preferably including: one or more primary-band amplification stages, one or more secondary-band amplification stages, one or more band-splitting filters, and/or one or more signal couplers. An analog canceller including one or more split-frequency amplifiers. A mixer including one or more split-frequency amplifiers. A voltage-controlled oscillator including one or more split-frequency amplifiers. A method for split-frequency amplification, preferably including: receiving an input signal, separating the input signal into signal portions, and/or amplifying the signal portions, and optionally including combining the amplified signal portions and/or providing one or more output signals.

A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An amplifier includes a first transistor for amplifying the fundamental signal applied to a gate terminal, and a second transistor having a source terminal electrically connected to the drain terminal of the first transistor and a drain terminal electrically connected to a bias voltage. The current flowing through the second transistor may be determined based on the current flowing in the drain terminal of the first transistor.