An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

A high-frequency power amplifier is configured to include plural island patterns (28) in which ends thereof are arranged in the vicinity of a transmission line (23) and other ends thereof are arranged in the vicinity of an end line (24a) in a transmission line (24), a wire (30) for connecting an end of an island pattern (28) and the transmission line (23), and a wire (31) for connecting another end of the island pattern (28) and the end line (24a) of the second transmission line (24), so that a mismatch of the impedance component having a resistance component and a reactance component can be compensated for by changing the number of first connecting members and the number of second connecting members, the first and second connecting members configured to connect an island pattern (28) to the transmission lines (23) and (24).

A high-frequency power amplifier is configured to include plural island patterns (28) in which ends thereof are arranged in the vicinity of a transmission line (23) and other ends thereof are arranged in the vicinity of an end line (24a) in a transmission line (24), a wire (30) for connecting an end of an island pattern (28) and the transmission line (23), and a wire (31) for connecting another end of the island pattern (28) and the end line (24a) of the second transmission line (24), so that a mismatch of the impedance component having a resistance component and a reactance component can be compensated for by changing the number of first connecting members and the number of second connecting members, the first and second connecting members configured to connect an island pattern (28) to the transmission lines (23) and (24).

The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

The present invention concerns a programmable power amplifier comprising: an amplifier core transistor circuit connected to an amplifier output node; a switch connected to the amplifier core transistor circuit, the switch being configured to switch on and off the amplifier core transistor circuit; and a feedback circuit of the amplifier core transistor circuit. The feedback circuit comprises a digital-to-analog converter and an operational amplifier having a first input node configured to receive a first reference signal; a second input node connected to the digital-to-analog converter; and an output node for outputting an operational amplifier output signal and connected to the amplifier core transistor circuit for controlling the amount of current flowing in the amplifier core transistor circuit. The digital-to-analog converter has a programmable resistance value for controlling the resistance of the digital-to-analog converter to thereby adjust a digital-to-analog converter output signal fed to the second input node of the operational amplifier for controlling an amplifier output signal at the amplifier output node.

A transistor (2) is provided on a surface of a semiconductor substrate (1). First and second wirings (10,11) are provided on the surface of the semiconductor substrate (1) and sandwich the transistor (2). Plural wires (20) pass over the transistor (2) and are connected to the first and second wirings (10,11). A sealing material (21) sealing the transistor (2), the first and second wirings (10,11), and the plural wires (20). The sealing material (21) contains a filler (21a). An interval distance between the plural wires (20) is smaller than a particle diameter of the filler (21a). The sealing material (21) does not intrude into a space between the plural wires (20) and the transistor (2) so that a cavity (22) is formed.

A transistor (2) is provided on a surface of a semiconductor substrate (1). First and second wirings (10,11) are provided on the surface of the semiconductor substrate (1) and sandwich the transistor (2). Plural wires (20) pass over the transistor (2) and are connected to the first and second wirings (10,11). A sealing material (21) sealing the transistor (2), the first and second wirings (10,11), and the plural wires (20). The sealing material (21) contains a filler (21a). An interval distance between the plural wires (20) is smaller than a particle diameter of the filler (21a). The sealing material (21) does not intrude into a space between the plural wires (20) and the transistor (2) so that a cavity (22) is formed.

Spatial power-combining devices and, more particularly, spatial power-combining devices with improved isolation are disclosed. Spatial power-combining devices are disclosed that include a thin film resistor that is configured to provide improved signal isolation. The thin film resistor may be arranged within one or more amplifier assemblies of the spatial power-combining device to reduce signal leakage between the amplifier assemblies. The thin film resistor may be formed on a carrier substrate or the thin film resistor may supported by a surface of an amplifier assembly without a carrier substrate. Spatial power-combining devices are disclosed that include a radial arrangement of amplifier assemblies, and each amplifier assembly includes an antenna structure and a thin film resistor.