Patent classifications
H03F3/193
Reconfigurable low-noise amplifier (LNA)
A reconfigurable low-noise amplifier (LNA) is disclosed. The reconfigurable LNA includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. The reconfigurable LNA further includes a gamma inverting network (GIN) coupled between the input terminal and the fixed voltage node, wherein the GIN has a first switch configured to disable the GIN during operation at first frequencies within a lower frequency band relative to a higher frequency band and to enable the GIN during operation at second frequencies within the higher frequency band.
Power amplifier module
A power amplifier module includes a first transistor that amplifies and outputs a radio frequency signal, a second transistor smaller in size than the first transistor and connected in parallel with the first transistor, a third transistor that supplies a bias current to the first and second transistors, a current detection circuit that detects a current flowing through a collector of the second transistor, and a bias control circuit that controls the bias current supplied from the third transistor to the first and second transistors by supplying a current corresponding to a detection result of the current detection circuit to a collector or a drain of the third transistor. In a case that a current flowing through the collector of the second transistor is larger than a predetermined threshold value, the bias control circuit reduces the current supplied to the collector or the drain of the third transistor.
Power amplifier module
A power amplifier module includes a first transistor that amplifies and outputs a radio frequency signal, a second transistor smaller in size than the first transistor and connected in parallel with the first transistor, a third transistor that supplies a bias current to the first and second transistors, a current detection circuit that detects a current flowing through a collector of the second transistor, and a bias control circuit that controls the bias current supplied from the third transistor to the first and second transistors by supplying a current corresponding to a detection result of the current detection circuit to a collector or a drain of the third transistor. In a case that a current flowing through the collector of the second transistor is larger than a predetermined threshold value, the bias control circuit reduces the current supplied to the collector or the drain of the third transistor.
Low-noise amplifier supporting beam-forming function and receiver including the same
A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.
Low-noise amplifier supporting beam-forming function and receiver including the same
A low-noise amplifier in a receiver supporting a beam forming function may selectively change a phase shift for beam steering. The low-noise amplifier may include first and second transistors and a variable capacitance circuit connected to a gate of the second transistor. The variable capacitance circuit may selectively change capacitance thereof based on a capacitance control signal applied thereto according to beam-forming information, where the changed capacitance correspondingly causes a phase change in an output signal of the low-noise amplifier. A similar scheme may be employed for amplifiers in transmit signal paths to steer a transmit beam.
AMPLIFIER WITH POST-DISTORTION LINEARIZATION
A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An amplifier includes a first transistor for amplifying the fundamental signal applied to a gate terminal. and a second transistor having a source terminal electrically connected to the drain terminal of the first transistor and a drain terminal electrically connected to a bias voltage. The current flowing through the second transistor may be determined based on the current flowing in the drain terminal of the first transistor.
Receiver front-end circuit and operating method thereof
A receiver front-end circuit and an operating method thereof are disclosed. The receiver front-end circuit includes a common-mode suppression circuit and a rear-stage circuit. The common-mode suppression circuit is used to receive an external input common-mode voltage signal and perform common-mode noise suppression processing on the external input common-mode voltage signal, and then output an internal input common-mode voltage signal. The rear-stage circuit is coupled to the common-mode suppression circuit and used to receive the internal input common-mode voltage signal. The dynamic swing of the internal input common-mode voltage signal is smaller than the dynamic swing of the external input common-mode voltage signal.
5G NR Configurable Wideband RF Front-End LNA
Methods and devices addressing design of reconfigurable wideband LNAs to meet stringent gain, noise figure, and linearity requirements with multiple gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements, such as 5G NR radios. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed.
High-frequency amplifier circuitry and semiconductor device
High-frequency amplifier circuitry includes first amplifier circuitry, second amplifier circuitry, and noise figure improving circuitry. The first amplifier circuitry includes a first transistor and a grounded-gate third transistor. The first transistor has a source grounded via a first source inductor and a gate to which an input signal is applied. The third transistor is configured to output from a drain a signal obtained by amplifying a signal outputted from a drain of the first transistor. The second amplifier circuitry includes a same circuit constant as a circuit constant of the first amplifier circuitry and includes a second transistor and a grounded-gate fourth transistor. The noise figure improving circuitry connects the source of the first transistor and the source of the second transistor to each other.
Amplifier device
A multi-stage device includes multiple stages such as a first stage and a second stage. During operation, the first stage receives an input signal and outputs an intermediate signal based on the input signal. The second stage is coupled to the first stage to receive the intermediate signal and produce an output signal. According to one configuration, the second stage includes: i) a transistor, and ii) a circuit path between the first stage and the transistor. The transistor component is controlled to derive the output signal from the intermediate signal inputted to the circuit path.