A wireless receiving device is provided. The wireless receiving device includes a first passive mixer and a common gate amplifier. The first passive mixer receives an oscillation signal. The common gate amplifier is coupled to the first passive mixer, and automatically adjusts the input impedance of the common gate amplifier according to the oscillation frequency of the oscillation signal.

According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.

According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.

A power amplifier and method for operating the same is disclosed. The amplifier includes a number of transistors coupled in series between a power node and a ground node. These transistors include a first transistor having a source terminal coupled to the power node, and a second transistor having its source terminal coupled to a ground node. A subset of transistors is also coupled in series between the first and second transistors. During operation in a first mode, the first and second transistors act as switching transistors, switching according to data received thereby. The subset of transistors, during the first mode, act as cascode transistors. During a second mode of operation, the transistors of the subset act as switching transistors, switching in accordance with the received data.

A packaged amplifier circuit includes an RF package with a die pad, and RF input and output leads extending away from the die pad opposite directions. An RF transistor die is mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead. A passive electrical connector is integrally formed in the RF transistor die. The passive electrical connector includes a first end connection point closer to the first outer edge side, and a second end connection point closer to the second outer edge side. A first discrete reactive device is mounted on the die pad between the first outer edge side and the first RF lead. The passive electrical connector electrically couples the first discrete reactive device to the second RF lead.

A packaged amplifier circuit includes an RF package with a die pad, and RF input and output leads extending away from the die pad opposite directions. An RF transistor die is mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead. A passive electrical connector is integrally formed in the RF transistor die. The passive electrical connector includes a first end connection point closer to the first outer edge side, and a second end connection point closer to the second outer edge side. A first discrete reactive device is mounted on the die pad between the first outer edge side and the first RF lead. The passive electrical connector electrically couples the first discrete reactive device to the second RF lead.

An electronic device including an amplifier which includes a first transistor configured to receive an input signal through a gate terminal thereof and having a source terminal electrically connected to ground, a second transistor configured to transmit an output signal through a drain terminal thereof and having a gate terminal electrically connected to the ground, and a switch electrically connected to the gate terminal of the second transistor and configured to switch a voltage being supplied to the gate terminal of the second transistor in accordance with turn-on or turn-off of the amplifier.

The disclosed embodiments relate to the design of a system that implements an up-conversion mixer. This system includes a regulator-based linearized transconductance (g.sub.m) stage, which converts a differential intermediate frequency (IF) voltage signal into a corresponding pair of IF currents. It also includes a pair of current mirrors, which duplicates the pair of IF currents into sources of a set of switching transistors. The set of switching transistors uses a differential local oscillator (LO) signal to gate the duplicated pair of IF currents to produce a differential radio frequency (RF) output signal. Finally, a combination of capacitors and/or inductors is coupled to common source nodes of the set of switching transistors to suppress higher order harmonics in an associated common source node voltage signal.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.