H03F3/193

MULTIPLE-PATH RF AMPLIFIERS WITH ANGULARLY OFFSET SIGNAL PATH DIRECTIONS, AND METHODS OF MANUFACTURE THEREOF
20200144968 · 2020-05-07 ·

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

MULTIPLE-PATH RF AMPLIFIERS WITH ANGULARLY OFFSET SIGNAL PATH DIRECTIONS, AND METHODS OF MANUFACTURE THEREOF
20200144968 · 2020-05-07 ·

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

WIDEBAND SIGNAL BUFFER
20200144977 · 2020-05-07 ·

Wideband signal buffers that can be employed for mmWave (millimeter wave) communication are disclosed. One example signal buffer comprises a variable gain amplifier (VGA) that receives two control words and outputs a feedback signal, wherein both an amplitude and a phase of the feedback signal are based on the two control words and on a bias voltage; and a matching network comprising a first inductor that outputs the bias voltage, a second inductor, and a third inductor that receives the feedback signal from the VGA, and wherein the first, second, and third inductors are magnetically coupled to each other, wherein the signal buffer is configured to receive a RF (Radio Frequency) input and to generate a RF output from the RF input based on a transfer function of the signal buffer, wherein the transfer function is based at least in part on the feedback signal.

WIDEBAND SIGNAL BUFFER
20200144977 · 2020-05-07 ·

Wideband signal buffers that can be employed for mmWave (millimeter wave) communication are disclosed. One example signal buffer comprises a variable gain amplifier (VGA) that receives two control words and outputs a feedback signal, wherein both an amplitude and a phase of the feedback signal are based on the two control words and on a bias voltage; and a matching network comprising a first inductor that outputs the bias voltage, a second inductor, and a third inductor that receives the feedback signal from the VGA, and wherein the first, second, and third inductors are magnetically coupled to each other, wherein the signal buffer is configured to receive a RF (Radio Frequency) input and to generate a RF output from the RF input based on a transfer function of the signal buffer, wherein the transfer function is based at least in part on the feedback signal.

CHARGE AMPLIFIERS THAT CAN BE IMPLEMENTED IN THIN FILM AND ARE USEFUL FOR IMAGING SYSTEMS SUCH AS DIGITAL BREAST TOMOSYNTHESIS WITH REDUCED X-RAY EXPOSURE
20200138393 · 2020-05-07 ·

An apparatus (e.g., an imaging system) includes a circuit, including: a p-i-n diode having a cathode coupled to a cathode bias voltage or ground; a charge transistor having a first source/drain terminal coupled to an anode of the diode; a storage capacitor having a first terminal coupled to a second source/drain terminal of the charge transistor and a second terminal coupled to the cathode; an amplification transistor having a gate terminal coupled to the first terminal of the storage capacitor and a first source/drain terminal coupled to a reference voltage; a read transistor having a first source/drain terminal coupled to a second source/drain terminal of the amplification transistor; a data line having a first terminal coupled to a second source/drain terminal of the read transistor; and a readout circuit coupled to a second terminal of the data line, providing an output voltage corresponding to charge on the storage capacitor.

CHARGE AMPLIFIERS THAT CAN BE IMPLEMENTED IN THIN FILM AND ARE USEFUL FOR IMAGING SYSTEMS SUCH AS DIGITAL BREAST TOMOSYNTHESIS WITH REDUCED X-RAY EXPOSURE
20200138393 · 2020-05-07 ·

An apparatus (e.g., an imaging system) includes a circuit, including: a p-i-n diode having a cathode coupled to a cathode bias voltage or ground; a charge transistor having a first source/drain terminal coupled to an anode of the diode; a storage capacitor having a first terminal coupled to a second source/drain terminal of the charge transistor and a second terminal coupled to the cathode; an amplification transistor having a gate terminal coupled to the first terminal of the storage capacitor and a first source/drain terminal coupled to a reference voltage; a read transistor having a first source/drain terminal coupled to a second source/drain terminal of the amplification transistor; a data line having a first terminal coupled to a second source/drain terminal of the read transistor; and a readout circuit coupled to a second terminal of the data line, providing an output voltage corresponding to charge on the storage capacitor.

BAND SHARING TECHNIQUE OF RECEIVER
20200144975 · 2020-05-07 ·

The present invention provides a receiver including a first band group, a second band group and a mixer. The first band group includes at least one LNA, wherein the first band group is configured to select one first LNA to receive a first input signal to generate an amplified first input signal. The second band group includes at least one LNA, wherein the second band group is configured to select one second LNA to receive a second input signal to generate an amplified second input signal. The first band group and the second band group are coupled to a first input terminal and a second input terminal of the mixer, respectively, and the mixer receives one of the amplified first input signal and the amplified second input signal to generate an output signal.

BAND SHARING TECHNIQUE OF RECEIVER
20200144975 · 2020-05-07 ·

The present invention provides a receiver including a first band group, a second band group and a mixer. The first band group includes at least one LNA, wherein the first band group is configured to select one first LNA to receive a first input signal to generate an amplified first input signal. The second band group includes at least one LNA, wherein the second band group is configured to select one second LNA to receive a second input signal to generate an amplified second input signal. The first band group and the second band group are coupled to a first input terminal and a second input terminal of the mixer, respectively, and the mixer receives one of the amplified first input signal and the amplified second input signal to generate an output signal.

Radio frequency oscillator

The embodiments of the invention relate to a radio frequency oscillator, the radio frequency oscillator comprising a resonator circuit resonant at an excitation of the resonator circuit in a differential mode and at an excitation of the resonator circuit in a common mode, wherein the resonator circuit has a differential mode resonance frequency at the excitation in the differential mode, and wherein the resonator circuit has a common mode resonance frequency at the excitation in the common mode, a first excitation circuit configured to excite the resonator circuit in the differential mode to obtain a differential mode oscillator signal oscillating at the differential mode resonance frequency, and a second excitation circuit configured to excite the resonator circuit in the common mode to obtain a common mode oscillator signal oscillating at the common mode resonance frequency.

Radio frequency oscillator

The embodiments of the invention relate to a radio frequency oscillator, the radio frequency oscillator comprising a resonator circuit resonant at an excitation of the resonator circuit in a differential mode and at an excitation of the resonator circuit in a common mode, wherein the resonator circuit has a differential mode resonance frequency at the excitation in the differential mode, and wherein the resonator circuit has a common mode resonance frequency at the excitation in the common mode, a first excitation circuit configured to excite the resonator circuit in the differential mode to obtain a differential mode oscillator signal oscillating at the differential mode resonance frequency, and a second excitation circuit configured to excite the resonator circuit in the common mode to obtain a common mode oscillator signal oscillating at the common mode resonance frequency.