H03F3/193

Inductor circuit and wireless communication devices
10637528 · 2020-04-28 · ·

An inductor circuit includes first inductive circuit, second inductive circuit, and third inductive circuit. First inductive circuit at receiver side has a first end coupled to a first port of an antenna and a second end coupled to an input port of a receiving circuit. Second inductive circuit at transmitter side has a first end and a second end respectively coupled to output ports of a power amplifier. Third inductive circuit at antenna side has a first end coupled to a first port of the antenna and having a second end. Second inductive circuit and the third inductive circuit are disposed on an outer ring to form a ring shape and the third inductive circuit is disposed on an inner ring within the outer ring to form a spiral shape. Third inductive circuit is disposed between the second inductive circuit and the first inductive circuit.

DEVICES AND METHODS RELATED TO VARIABLE LOAD POWER AMPLIFIER SUPPORTING DUAL-MODE ENVELOPE TRACKING AND AVERAGE POWER TRACKING PERFORMANCE

A variable load power amplifier that improves the performance of a power amplifier that provides both envelope tracking (ET) and average power tracking (APT). The variable load power amplifier can include a plurality of amplifiers that are each selectively connectable into one of a plurality of parallel combinations, each of the plurality of parallel combinations characterized by a corresponding load line. The variable load power amplifier can also include a plurality of control elements arranged to selectively connect one or more of the plurality of amplifiers into one of the plurality of parallel combinations, each of the plurality of control elements having a respective input terminal provided to receive a respective control signal, each of the plurality of control elements responsive to the respective control signal.

DEVICES AND METHODS RELATED TO VARIABLE LOAD POWER AMPLIFIER SUPPORTING DUAL-MODE ENVELOPE TRACKING AND AVERAGE POWER TRACKING PERFORMANCE

A variable load power amplifier that improves the performance of a power amplifier that provides both envelope tracking (ET) and average power tracking (APT). The variable load power amplifier can include a plurality of amplifiers that are each selectively connectable into one of a plurality of parallel combinations, each of the plurality of parallel combinations characterized by a corresponding load line. The variable load power amplifier can also include a plurality of control elements arranged to selectively connect one or more of the plurality of amplifiers into one of the plurality of parallel combinations, each of the plurality of control elements having a respective input terminal provided to receive a respective control signal, each of the plurality of control elements responsive to the respective control signal.

Programmable Optimized Band Switching LNA for Operation in Multiple Narrow-Band Frequency Ranges
20200127618 · 2020-04-23 ·

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

Programmable Optimized Band Switching LNA for Operation in Multiple Narrow-Band Frequency Ranges
20200127618 · 2020-04-23 ·

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

POWER AMPLIFIER AND ELECTRONIC DEVICE

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

SWITCHLESS MULTI INPUT STACKED TRANSISTOR AMPLIFIER TREE STRUCTURE
20200127617 · 2020-04-23 ·

Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.

SWITCHLESS MULTI INPUT STACKED TRANSISTOR AMPLIFIER TREE STRUCTURE
20200127617 · 2020-04-23 ·

Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.

TRANSISTOR LEVEL INPUT AND OUTPUT HARMONIC TERMINATIONS
20200127627 · 2020-04-23 ·

A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.

POWER AMPLIFIER CIRCUIT
20200127622 · 2020-04-23 ·

A power amplifier circuit includes a first transistor, wherein a radio frequency signal is inputted to a base or gate of the first transistor; a second transistor having an emitter connected to a collector or drain of the first transistor, wherein a first voltage is supplied to a collector of the second transistor, and a first amplified signal obtained by amplifying the radio frequency signal is outputted from the collector of the second transistor; and a third transistor configured to supply a bias voltage to a base of the second transistor. A second voltage is supplied to a collector or drain of the third transistor, a third voltage corresponding to the first voltage is supplied to a base or gate of the third transistor, and the bias voltage, which corresponds to the third voltage, is supplied from an emitter or source of the third transistor.