One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.

One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

In an embodiment an amplifier includes a first MOS transistor having a drain connected to an output of the amplifier and a source coupled to a first node configured to receive a first power supply potential, a first capacitive element connected between an input of the amplifier and a gate of the first MOS transistor, a first current source connecting the drain of the first MOS transistor to a second node configured to receive a second power supply potential and a resistive element and a second capacitive element connected in parallel between the gate and the drain of the first MOS transistor, the resistive element including a switched capacitor.

In an embodiment an amplifier includes a first MOS transistor having a drain connected to an output of the amplifier and a source coupled to a first node configured to receive a first power supply potential, a first capacitive element connected between an input of the amplifier and a gate of the first MOS transistor, a first current source connecting the drain of the first MOS transistor to a second node configured to receive a second power supply potential and a resistive element and a second capacitive element connected in parallel between the gate and the drain of the first MOS transistor, the resistive element including a switched capacitor.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Bias schemes for cascode power amplifiers are disclosed. In certain embodiments, a power amplifier system includes a cascode power amplifier powered by a first supply voltage and that amplifies a radio frequency input signal, and a bias circuit including a voltage regulator that generates a regulated voltage and is powered by the first supply voltage. The bias circuit further includes a bias voltage generation circuit that receives the regulated voltage and generates at least one cascode bias voltage for the cascode power amplifier, a switch that gates a second supply voltage to generate a gated supply voltage, a bias current generation circuit that controls a bias current of the cascode power amplifier and is powered by the gated supply voltage, and a gating circuit that controls the switch based on the regulated voltage and the second supply voltage.

A low noise amplifier includes a first input port configured to receive a first input signal, a second input port configured to receive a second input signal, and a first amplifier stage including a first gain stage connected to the first input port and the second input port, and a first drive stage between the first gain stage and a first load circuit. The first gain stage includes a first-first gain block connected to the first input port, a first-second gain block connected to the second input port, and a first degeneration inductor between a ground terminal and a first common node of the first-first gain block and the first-second gain block. The amplifier includes a second amplifier stage including a second gain stage connected to the first input port and the second input port, and a second drive stage between the second gain stage and a second load.