An envelope tracking supply modulator includes an amplifier circuit and a zero peaking circuit. The amplifier circuit receives an envelope input, generates a modulated supply voltage according to the envelope input, and provides the modulated supply voltage to a power amplifier. The zero peaking circuit is coupled to the amplifier circuit, and applies zero peaking to the amplifier circuit, where the zero peaking inserts a zero at a frequency.

Apparatus (1) comprises envelope signal amplification circuitry (11) configured to receive an input envelope signal (ENV_in) indicative of an envelope of an input radio frequency signal (RF_in) and to output an amplified envelope signal (ENV_amp); and a radio frequency power amplifier (12) configured to receive a radio frequency control signal which is dependent on the input radio frequency signal(RF_in) and the input envelope signal (ENV_in), using the amplified envelope signal (ENV_amp) as its supply voltage, to output an amplified radio frequency signal (RF_amp). A method for amplification the radio frequency signal is also provided.

An amplification device includes an amplification circuit, an inductor, a regulator, and a impedance circuit. The amplification circuit has an input terminal for receiving a radio frequency signal, and an output terminal for outputting an amplified radio frequency signal. The inductor has a first terminal, and a second terminal coupled to the output terminal of the amplification circuit. The regulator is coupled to the first terminal of the inductor and generates a steady voltage and/or a steady current. The impedance circuit has a first terminal coupled to the output terminal of the amplification circuit, and a second terminal coupled to a first system voltage terminal. The impedance circuit provides a low frequency impedance path to suppress a beat frequency signal in the amplified radio frequency signal.

A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.

A power amplifier comprising a bipolar transistor connected in cascode with a field effect transistor (FET) such as a pseudomorphic high electron mobility transistor (PHEMT) device. The bipolar transistor has a common emitter and the FET a common gate. Advantageously, the bipolar transistor is a heterojunction bipolar transistor (HBT); and the HBT and the FET may be integrated on a single die. Illustrative materials for the HBT and FET are Gallium Nitride, Indium Phosphide, or Gallium Arsenide/Indium Gallium Phosphide.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

A voltage-controlled oscillator, including a voltage-controlled LC resonator including at least one first output node; an amplifier including at least one first dual-gate MOS transistor including first and second gates, coupling the first output node to a second node of application of a reference potential; and a regulation circuit capable of applying to the second gate of the first transistor a bias voltage variable according to the amplitude of the oscillations of a signal delivered on the first output node of the oscillator.