A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.

An embodiment is a multiplexer including a first distributed amplifier with an impedance matched to 50Ω, the first distributed amplifier configured to receive a first signal and output a first amplified signal, a second distributed amplifier with an impedance matched to 50Ω, the second distributed amplifier configured to receive a second signal and output a second amplified signal, and a passive multiplexer configured to multiplex the first amplified signal and the second amplified signal, and output a multiplexed signal to a signal output terminal, the passive multiplexer including a first resistor having a first end to receive the first amplified signal, a second resistor having a first end to receive the second amplified signal, and a third resistor having a first end connected to second ends of the first and second resistors and a second end connected to the signal output terminal.

A power amplifier using multi-path common-mode feedback loops for radio frequency linearization is disclosed. In one aspect, a complementary metal oxide semiconductor (CMOS) power amplifier containing cascoded n-type field effect transistors (NFETs) and cascoded p-type FETs (PFETs) may have a common-mode feedback network and provides bias voltages that are dynamically varying with the signal power to keep the output common-mode fixed around a half-supply level, while the small-signal and large-signal transconductances of the FET's are kept balanced. A further feedback network may be associated with the supply voltage to assist in providing a symmetrical supply signal. The symmetrical supply signal allows for supply variations without introducing distortion for the power amplifier stage.

A circuit arrangement for limiting the gate current at a field effect transistor, FET, comprises a first FET and a DC supply network connected to a gate terminal of the first FET; ¬wherein the supply network provides a voltage Vgg to the gate terminal of the first FET via a first connection comprising a high impedance resistor R1 and a second FET connected in series therewith and having a gate terminal; the second FET having an ON state at a gate-source voltage of 0 V and having its gate terminal also connected to the gate terminal of the first FET via a second connection in parallel with the resistor R1; wherein a voltage drop occurring across the resistor R1 results in increasing blocking of the second FET.

A circuit arrangement for limiting the gate current at a field effect transistor, FET, comprises a first FET and a DC supply network connected to a gate terminal of the first FET; ¬wherein the supply network provides a voltage Vgg to the gate terminal of the first FET via a first connection comprising a high impedance resistor R1 and a second FET connected in series therewith and having a gate terminal; the second FET having an ON state at a gate-source voltage of 0 V and having its gate terminal also connected to the gate terminal of the first FET via a second connection in parallel with the resistor R1; wherein a voltage drop occurring across the resistor R1 results in increasing blocking of the second FET.

One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.