Coupling between inductors is restrained, and the layout area of a substrate is also ensured. A high-frequency module includes a mounting substrate, a first inductor, a second inductor, at least one high-frequency component, a shield layer, and a conductive member. The mounting substrate has a main surface. The first inductor is located on a main surface side of the mounting substrate. The second inductor is located on the main surface side of the mounting substrate. The high-frequency component is located on the main surface side of the mounting substrate and between the first inductor and the second inductor. The shield layer is connected to the ground. The conductive member connects the high-frequency component and the shield layer. The conductive member is connected to a main surface of the high-frequency component, the main surface facing the shield layer.

In each E-class inverter, an internal voltage detection circuit detects an internal voltage of a resonant type power supply circuit or a matching circuit and adjusts a phase of a driving signal of a MOSFET based on a detected voltage. It is thus possible to match a phase of a current voltage of a sine waveform of each inverter and combine power highly efficiently. Since power combining is performed highly efficiently without using a variable capacitor and variable inductor, it is possible to suppress upsizing of elements and achieve downsizing of a power amplifier circuit.

In each E-class inverter, an internal voltage detection circuit detects an internal voltage of a resonant type power supply circuit or a matching circuit and adjusts a phase of a driving signal of a MOSFET based on a detected voltage. It is thus possible to match a phase of a current voltage of a sine waveform of each inverter and combine power highly efficiently. Since power combining is performed highly efficiently without using a variable capacitor and variable inductor, it is possible to suppress upsizing of elements and achieve downsizing of a power amplifier circuit.

A low noise amplifier that includes a first cascode, a second cascode, an input circuit, an output node, a first switch, and a second switch. A source of a first common gate transistor and a drain of a first common source transistor of the first cascode are coupled to a first node of the low noise amplifier. The output node is coupled to a drain of the first common gate transistor, and to a drain of a second common gate transistor of the second cascode, thereby coupling the first cascode and the second cascode to a power supply via a load. The first switch is coupled between a gate of the first common gate transistor and the power supply. The second switch is coupled between the first node and the power supply. The first switch is configured to be open and the second switch is configured to be closed when the low noise amplifier operates at a first operational node. The first switch is configured to be closed and the second switch is configured to be open when the low noise amplifier operates at a second operational node that differs from the first operational mode by at least a gain of the low noise amplifier.

A compound semiconductor device includes: a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from a compound semiconductor; a gate electrode, a source electrode, and a drain electrode that are provided above the electron supply layer; and an insulating layer that is provided between the source electrode and the drain electrode, over the semiconductor laminate structure, and with a gate recess formed therein, wherein the gate electrode includes: a first portion in the gate recess; and a second portion that is coupled to the first portion and is provided over the insulating layer at a position further on the drain electrode side than the gate recess, wherein the insulating layer includes an aluminum oxide film in direct contact with the semiconductor laminate structure.

A compound semiconductor device includes: a semiconductor laminate structure including an electron transit layer and an electron supply layer that are formed from a compound semiconductor; a gate electrode, a source electrode, and a drain electrode that are provided above the electron supply layer; and an insulating layer that is provided between the source electrode and the drain electrode, over the semiconductor laminate structure, and with a gate recess formed therein, wherein the gate electrode includes: a first portion in the gate recess; and a second portion that is coupled to the first portion and is provided over the insulating layer at a position further on the drain electrode side than the gate recess, wherein the insulating layer includes an aluminum oxide film in direct contact with the semiconductor laminate structure.

An XTC circuit includes delay circuits, differentiated signal generating circuits, and an amplitude adjusting and adding circuit. A signal Da, which is one aggressor signal, is input to the differentiated signal generating circuit after being delayed by the delay circuit, and the differentiated signal generating circuit generates a differentiated signal having a differentiated waveform of the signal Da. In the amplitude adjusting and adding circuit, the differentiated signal generated by the differentiated signal generating circuit is amplitude-adjusted to become a current signal, and the differentiated signal after the amplitude adjustment is current-added to the signal Db.

An XTC circuit includes delay circuits, differentiated signal generating circuits, and an amplitude adjusting and adding circuit. A signal Da, which is one aggressor signal, is input to the differentiated signal generating circuit after being delayed by the delay circuit, and the differentiated signal generating circuit generates a differentiated signal having a differentiated waveform of the signal Da. In the amplitude adjusting and adding circuit, the differentiated signal generated by the differentiated signal generating circuit is amplitude-adjusted to become a current signal, and the differentiated signal after the amplitude adjustment is current-added to the signal Db.

An amplifier includes amplifier circuits connected in series between a ground and a power supply, each amplifier circuit includes: a transistor; and a first capacitance, one end of which is connected to a drain of the transistor, a first amplifier circuit connected closest to the power supply includes a load connected between the drain of the transistor and the power supply, each of the amplifier circuits except for the first amplifier circuit includes a load connected between the drain of the transistor of an own amplifier circuit and a source of the transistor of an amplifier circuit adjacent to the own amplifier circuit, each of the amplifier circuits except for an amplifier circuit connected farthest from the power supply includes a second capacitance connected between the source of the transistor and the ground, and the second capacitance has a capacitance value larger than a capacitance value of the first capacitance.

Circuits and methods for improving the noise figure (NF) of an amplifier, particularly an LNA, in high-gain modes while improving the IIP3 of the amplifier in low-gain modes. The source of an amplifier common-source FET is coupled to circuit ground thorough a degeneration circuit comprising a two-port inductor and a bypass switch coupled in parallel with the inductor. A switched feedback circuit is coupled between the gate of the common-source FET and a feedback node in the amplifier output signal path. During a low gain mode, the inductor is entirely bypassed and the enabled feedback circuit lowers the input impedance of the common-source FET and reduces the gain of the amplifier circuit, essentially eliminating the need for a degeneration inductor. During a high gain mode, the source of the common-source FET is coupled to circuit ground through the inductor and the feedback circuit is disabled. Other gain modes are supported.