An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

An electronic device comprises a first communication circuit configured to transmit at least one radio frequency (RF) signal, at least one antenna structure, electrically coupled to the first communication circuit, and including a plurality of antenna elements, at least one processor operatively coupled to the first communication circuit, and memory operatively coupled to the at least one processor. The memory stores instructions that, when executed by the at least one processor, causes the processor to perform a plurality of operation. The plurality of operations comprises identifying mobility information of the electronic device, identifying a beam width of a beam formed by at least a part of the plurality of antenna elements based on at least part of the mobility information of the electronic device, the beam being used to search for or communicate with an external electronic device, and forming the beam having the identified beam width.

An electronic device comprises a first communication circuit configured to transmit at least one radio frequency (RF) signal, at least one antenna structure, electrically coupled to the first communication circuit, and including a plurality of antenna elements, at least one processor operatively coupled to the first communication circuit, and memory operatively coupled to the at least one processor. The memory stores instructions that, when executed by the at least one processor, causes the processor to perform a plurality of operation. The plurality of operations comprises identifying mobility information of the electronic device, identifying a beam width of a beam formed by at least a part of the plurality of antenna elements based on at least part of the mobility information of the electronic device, the beam being used to search for or communicate with an external electronic device, and forming the beam having the identified beam width.

An amplifier, e.g., a low-noise amplifier, includes a field-effect transistor having a one-dimensional channel. This channel includes a semiconductor material for conducting electrons along a main direction of the channel. This direction is perpendicular to a cross-section of the channel. Dimensions of this cross-section are, together with the semiconductor material, such that the channel exhibits quantized conduction of electrons along its main direction. The amplifier further includes an electrical circuit that is configured to operate the transistor at a value of gate-to-source voltage bias corresponding to a peak value of a peak of a transconductance of the channel with respect to gate-to-source voltage bias values.

An amplifier, e.g., a low-noise amplifier, includes a field-effect transistor having a one-dimensional channel. This channel includes a semiconductor material for conducting electrons along a main direction of the channel. This direction is perpendicular to a cross-section of the channel. Dimensions of this cross-section are, together with the semiconductor material, such that the channel exhibits quantized conduction of electrons along its main direction. The amplifier further includes an electrical circuit that is configured to operate the transistor at a value of gate-to-source voltage bias corresponding to a peak value of a peak of a transconductance of the channel with respect to gate-to-source voltage bias values.

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

A power amplifier may comprise: an element for amplifying an electrical signal received through an input terminal, and outputting the amplified electrical signal through an output terminal; a first impedance adjustment circuit connected to the input terminal of the element and adjusting impedance with respect to a frequency of a fundamental component at the input terminal; a second impedance adjustment circuit connected to the input terminal of the element and adjusting impedance with respect to a frequency of a multiplied harmonic component at the input terminal; a third impedance adjustment circuit connected to the output terminal of the element and adjusting impedance with respect to the frequency of the fundamental component at the output terminal; a fourth impedance adjustment circuit connected to the output terminal of the element and adjusting impedance with respect to the frequency of the multiplied harmonic component at the output terminal; a first frequency separation circuit which prevents an impedance change by the first impedance adjustment circuit with respect to the frequency of the multiplied harmonic component at the input terminal, and prevents an impedance change by the second impedance adjustment circuit with respect to the frequency of the fundamental component at the input terminal; and a second frequency separation circuit which prevents an impedance change by the third impedance adjustment circuit with respect to the frequency of the multiplied harmonic component at the output terminal, and prevents an impedance change by the fourth impedance adjustment circuit with respect to the frequency of the fundamental component at the output terminal.

A power amplifier may comprise: an element for amplifying an electrical signal received through an input terminal, and outputting the amplified electrical signal through an output terminal; a first impedance adjustment circuit connected to the input terminal of the element and adjusting impedance with respect to a frequency of a fundamental component at the input terminal; a second impedance adjustment circuit connected to the input terminal of the element and adjusting impedance with respect to a frequency of a multiplied harmonic component at the input terminal; a third impedance adjustment circuit connected to the output terminal of the element and adjusting impedance with respect to the frequency of the fundamental component at the output terminal; a fourth impedance adjustment circuit connected to the output terminal of the element and adjusting impedance with respect to the frequency of the multiplied harmonic component at the output terminal; a first frequency separation circuit which prevents an impedance change by the first impedance adjustment circuit with respect to the frequency of the multiplied harmonic component at the input terminal, and prevents an impedance change by the second impedance adjustment circuit with respect to the frequency of the fundamental component at the input terminal; and a second frequency separation circuit which prevents an impedance change by the third impedance adjustment circuit with respect to the frequency of the multiplied harmonic component at the output terminal, and prevents an impedance change by the fourth impedance adjustment circuit with respect to the frequency of the fundamental component at the output terminal.