In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.

In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.

A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.

A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.

An auto-tuning controller for improving a performance of a power amplifier system is provided. The controller includes an interface including input terminals and output terminals, the interface being configured to acquire input signal conditions of power amplifiers (PAs), a training circuit including a processor and a memory running and storing a Digital Doherty amplifier (DDA) controller (module), a DPD controller (module) and a DDA-DPD neural network (NN). The training circuit is configured to perform sampling the input signal conditions, and selecting a DPD model from a set of polynomial models for the DPD controller and a set of DDA optimization variables for the DDA controller, using optimized DPD model and DDA coefficients, wherein the optimized DPD model and DDA coefficients are provided by performing an offline optimization for the DPD model and DDA coefficients based on a predetermined optimization method, collecting the optimized DPD coefficients and optimized DDA optimization variables, generating online-DDA optimal coefficients and DPD optimal coefficients using a trained DDA-DPD NN, and updating the generated optimal DDA and DPD coefficients via the output terminals of the interface.

A semiconductor integrated circuit includes an input terminal, an output terminal, and a multi-stage connection unit including multiple MOS transistors connected in multiple stages between the input terminal and the output terminal. The MOS transistors include an input stage transistor connected to the input terminal and an output stage transistor connected to the output terminal. A thickness of a gate dielectric of the output stage transistor is equal to a thickness of a gate dielectric of the input stage transistor, and a gate length of the output stage transistor is longer than a gate length of the input stage transistor.

A semiconductor integrated circuit includes an input terminal, an output terminal, and a multi-stage connection unit including multiple MOS transistors connected in multiple stages between the input terminal and the output terminal. The MOS transistors include an input stage transistor connected to the input terminal and an output stage transistor connected to the output terminal. A thickness of a gate dielectric of the output stage transistor is equal to a thickness of a gate dielectric of the input stage transistor, and a gate length of the output stage transistor is longer than a gate length of the input stage transistor.

A dual mode notch filter for use in a multi-band millimeter wave (mmW) transmitter includes a transmit filter circuit disposed between two amplifiers in a mmW transmit signal path, the transmit filter circuit formed by at least one switch, at least one capacitor, and a double-tuned transformer, the transmit filter circuit having at least two modes configured to selectively filter a spurious signal in at least a first communication band.

In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.

An autotuning controller is provided for improving power efficiency and linearity of digital power amplifiers (DPAs). The controller includes an interface including input and output terminals connected to the DPAs, the interface being configured to acquire input signals and output signals, a digital pre-distortion (DPD)-DPA adaptive controller including a processor and a memory running and storing a DPD algorithm, an efficiency enhancement method and a learning cost function. The DPD adaptive controller is configured to perform steps of computing DPD coefficients to define a learning cost function based on a DPD model by use of a data-driven optimization method, wherein the leaning cost function includes both variables of a DDA performance and a DPD performance, updating the learning cost function based on the DPD performance, optimizing the updated learning cost function by solving the updated learning cost function with respect to the variables of the DDA performance, and providing optimal parameters for DPA and DPD via the interface.