A radio frequency circuit includes a transmit power amplifier, a differential transmit signal path having first and second paths, and first and second baluns. The first balun can be configured to convert a single ended transmit signal into a differential transmit signal, and the second balun can be configured to convert the differential transmit signal back to a single ended transmit signal. The circuit can also include a pair of transmit filters between the first and second baluns and including a first transmit filter connected in the first path and a second transmit filter connected in the second path. The second balun cancels harmonic noise generated by the pair of transmit filters.

A radio frequency circuit includes a transmit power amplifier, a differential transmit signal path having first and second paths, and first and second baluns. The first balun can be configured to convert a single ended transmit signal into a differential transmit signal, and the second balun can be configured to convert the differential transmit signal back to a single ended transmit signal. The circuit can also include a pair of transmit filters between the first and second baluns and including a first transmit filter connected in the first path and a second transmit filter connected in the second path. The second balun cancels harmonic noise generated by the pair of transmit filters.

A high frequency circuit includes a transistor amplifying a high frequency signal, and having an input electrode and an output electrode, a line that is connected to any one of the input electrode and the output electrode, and transmits a high frequency signal or an amplified high frequency signal, a bias terminal to which a bias voltage is supplied, a bias circuit that has a first end connected to a first node and a second end connected to the bias terminal, and suppresses a high frequency signal having a frequency within an operating frequency band of the transistor from passing from the first node to the bias terminal, and a resonance circuit that is connected between a reference potential and a second node provided between the bias terminal and the bias circuit, and minimizes an impedance between the second node and the reference potential at a resonance frequency.

A high frequency circuit includes a transistor amplifying a high frequency signal, and having an input electrode and an output electrode, a line that is connected to any one of the input electrode and the output electrode, and transmits a high frequency signal or an amplified high frequency signal, a bias terminal to which a bias voltage is supplied, a bias circuit that has a first end connected to a first node and a second end connected to the bias terminal, and suppresses a high frequency signal having a frequency within an operating frequency band of the transistor from passing from the first node to the bias terminal, and a resonance circuit that is connected between a reference potential and a second node provided between the bias terminal and the bias circuit, and minimizes an impedance between the second node and the reference potential at a resonance frequency.

A high frequency circuit includes a transistor having an input electrode that inputs a high frequency signal and an output electrode that outputs the high frequency signal, a transmission line that is connected to any one of the input electrode and the output electrode, and transmits the high frequency signal, a coupling line electrically separated from the transmission line to an extent that an electromagnetic field coupling is enabled with the transmission line, and a resonance circuit that is connected between a first end of the coupling line and a reference potential, and minimizes an impedance between the first end and the reference potential at a resonance frequency.

An amplifier circuit comprising a power amplifier and a protection circuit coupled to the power amplifier. The protection circuit is configured to detect an overdrive condition and, in response to detecting an overdrive condition, apply a clamping status to the protection circuit to reduce a bias current to the power amplifier. The protection circuit has a capacitor and a recovery circuit including: a sensing component configured to monitor a change of charging and discharging currents to and from the capacitor respectively during the clamping status; a first device configured to set a time constant of the recovery circuit; and a second device configured to reset the protection circuit to remove the clamping status when the change of charging or discharging current is beyond a predetermined threshold.

A high frequency device includes a semiconductor chip including a semiconductor substrate, and an amplifier provided on a front surface of the semiconductor substrate and amplifying a high frequency signal, a first reference potential layer provided above the semiconductor chip in an upper direction perpendicular to the front surface of the semiconductor substrate, and provided so as to overlap with the semiconductor chip in a plan view from above, and to which a reference potential is supplied, and a resonator provided between the semiconductor chip and the first reference potential layer in the upper direction perpendicular to the front surface of the semiconductor substrate, wherein a resonance frequency of the resonator is included in an operating frequency band of the amplifier, and an impedance of the resonator becomes minimal at the resonance frequency.

A high frequency device includes a semiconductor chip including a semiconductor substrate, and an amplifier provided on a front surface of the semiconductor substrate and amplifying a high frequency signal, a first reference potential layer provided above the semiconductor chip in an upper direction perpendicular to the front surface of the semiconductor substrate, and provided so as to overlap with the semiconductor chip in a plan view from above, and to which a reference potential is supplied, and a resonator provided between the semiconductor chip and the first reference potential layer in the upper direction perpendicular to the front surface of the semiconductor substrate, wherein a resonance frequency of the resonator is included in an operating frequency band of the amplifier, and an impedance of the resonator becomes minimal at the resonance frequency.

Example chip structures are described. One example chip structure includes a die, a first chip bond pad, and a second chip bond pad. A first radio frequency circuit, a second radio frequency circuit, a first interconnect metal wire, and a second interconnect metal wire are disposed in the die. The first interconnect metal wire is connected to the first radio frequency module, and is configured to provide an alternating current ground for the first radio frequency module. The second interconnect metal wire is connected to the second radio frequency module, and is configured to provide an alternating current ground for the second radio frequency module. The first chip bond pad and the second chip bond pad are disposed on a surface of the die.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.