A radio-frequency module includes an integrated circuit (IC) device and an external inductor provided outside the IC device. The IC device includes a plurality of low-noise amplifiers, one or more inductors, and a switching circuit. The plurality of low-noise amplifiers includes a plurality of transistors in one to one correspondence. The one or more inductors are coupled to one or more of the plurality of transistors. Each inductor is coupled to the emitter or source of a corresponding one of the plurality of transistors. The switching circuit is coupled between the emitter or source of each of the plurality of transistors and the external inductor. The external inductor is coupled between the switching circuit and ground in series with each of the one or more inductors via the switching circuit.

One or more systems, devices and/or methods of use provided herein relate to a device that can support a signal generation. A current-mode end-to-end signal path can include a digital to analog converter (DAC) operating in current-mode and an upconverting mixer, operating in current-mode and operatively coupled to the DAC. Analog inputs and outputs of the DAC and upconverting mixer can be represented as currents, and the DAC can generate a baseband signal. The DAC and upconverting mixer each can comprise switching transistors of the same type, such as p-type metal-oxide semiconductor (PMOS) switching transistors. In one or more embodiments, a current source and a diode-connected transistor can be arranged in parallel in the current-mode signal path, and the current source passes a static current, while the diode-connected transistor passes both a static current and a dynamic current.

A high frequency semiconductor amplifier includes a package base part, and a monolithic microwave integrated circuit. The package base part includes a metal plate provided with an attachment hole, a frame body bonded to the metal plate and provided with an opening, a first lead part, and a second lead part. The monolithic microwave integrated circuit is provided with a first amplification element and a second amplification element. An output electrode of the second amplification element is connected to the second lead part via an output combiner. Each finger electrode of the second amplification element is generally orthogonal to the first line. Each finger electrode of the first amplification element is generally parallel to the first line. The attachment hole of the metal plate is provided in a region lying along a second line generally orthogonal to the first line and protruding outside the frame body.

An impedance matching network for a radio frequency (RF) transmission system can include first port for coupling to a first transistor differential pair. The network can further include a second port for coupling to a second tansistor differential pair. The network can further incluede a matching network connected to the port and the second port, the matching network comprised of a pair of coupled lines. Other aspects are described.

Polyphase power amplifiers for load insensitivity are disclosed. In certain embodiments, a polyphase transmit system includes an intermediate frequency transceiver including a first complex mixer that outputs a plurality of intermediate frequency transmit signals of different phases, and an intermediate frequency to radio frequency module including a second complex mixer that generates a plurality of radio frequency transmit signals of different phases based on the plurality of intermediate frequency transmit signals, and a polyphase power amplifier that receives the plurality of radio frequency transmit signals and outputs an amplified radio frequency signal. The polyphase transmit system further includes an antenna that transmits the amplified radio frequency signal.

An amplifier arrangement comprises N amplifier stages, wherein N is an integer equal or greater than four. The amplifier arrangement comprises a cascade of quarter wavelength transmission lines coupled between an output of an amplifier of a first amplifier stage and an output node of the amplifier arrangement, wherein the cascade comprises N−1 quarter wavelength transmission lines. An amplifier of the Nth stage is coupled to the output node, and remaining amplifiers between the first and Nth stages coupled to successive junctions in the cascade of quarter wavelength transmission lines. The amplifier arrangement is further configured such that the amplifier of the Nth stage is coupled to the output node via a connecting quarter wavelength transmission line, and whereby each of the remaining amplifiers of the N−2 stages closest to the output node is coupled by a respective connecting quarter wavelength transmission line to a respective junction of the cascade of quarter wavelength transmission lines.

An amplifier arrangement comprises N amplifier stages, wherein N is an integer equal or greater than four. The amplifier arrangement comprises a cascade of quarter wavelength transmission lines coupled between an output of an amplifier of a first amplifier stage and an output node of the amplifier arrangement, wherein the cascade comprises N−1 quarter wavelength transmission lines. An amplifier of the Nth stage is coupled to the output node, and remaining amplifiers between the first and Nth stages coupled to successive junctions in the cascade of quarter wavelength transmission lines. The amplifier arrangement is further configured such that the amplifier of the Nth stage is coupled to the output node via a connecting quarter wavelength transmission line, and whereby each of the remaining amplifiers of the N−2 stages closest to the output node is coupled by a respective connecting quarter wavelength transmission line to a respective junction of the cascade of quarter wavelength transmission lines.

A transistor package according to one exemplary embodiment includes main transistors and a sub-transistor placed in the same package as the main transistors and having a smaller size than the main transistors. It is thereby possible to provide a transistor package with more versatility capable of forming various types of Doherty amplification circuits such as a Doherty amplification circuit with auto-biasing function and an extended Doherty amplification circuit with desired operating characteristics, an amplification circuit including the same, and a method of forming a transistor.

A transistor package according to one exemplary embodiment includes main transistors and a sub-transistor placed in the same package as the main transistors and having a smaller size than the main transistors. It is thereby possible to provide a transistor package with more versatility capable of forming various types of Doherty amplification circuits such as a Doherty amplification circuit with auto-biasing function and an extended Doherty amplification circuit with desired operating characteristics, an amplification circuit including the same, and a method of forming a transistor.

Power amplifiers for amplifying a radio frequency signal are provided. The power amplifier may include an envelope tracking power supply, a carrier amplifier coupled with the envelope tracking power supply and configured to amplify the radio frequency signal, an input matching network configured to split the amplified radio frequency signal from the carrier amplifier such that one part of the amplified radio frequency signal passes along a peak amplifier path and another part of the amplified radio frequency signal passes along an impedance transformer path, a peak amplifier coupled with the envelope tracking power supply and configured to amplify the one part of the amplified radio frequency signal from the input matching network, an impedance transformer configured to perform impedance transformation on the other part of the amplified radio frequency signal from the input matching network, an output matching network configured to combine the output of the peak amplifier and the impedance transformer, wherein the peak amplifier is configured to be switched off in a lower power mode and switched on in a high power mode based at least in part on an input power level of the radio frequency signal. With the claimed solutions, more powerful and efficient power amplifiers that are capable of operating over broader frequency ranges may be achieved.