A surface acoustic wave device including a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a polymeric roof layer arranged over the piezoelectric layer and interdigital transducer electrode. The polymeric roof layer is spaced apart from the piezoelectric layer to define a cavity to accommodate the interdigital transducer electrode. The polymeric roof layer is supported along a span of the polymeric roof layer by at least one pillar. The thermal conductivity of the pillar is greater than the thermal conductivity of the polymeric roof layer. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

A fast-switching average power tracking (APT) power management integrated circuit (PMIC) is provided. The fast-switching APT PMIC includes a voltage amplifier(s) and an offset capacitor(s) having a small capacitance (e.g., between 10 nF and 200 nF). The voltage amplifier(s) is configured to generate an initial APT voltage(s) based on an APT target voltage(s) and the offset capacitor(s) is configured to raise the initial APT voltage(s) by an offset voltage(s) to generate an APT voltage(s). In embodiments disclosed herein, the offset voltage(s) is modulated based on the APT target voltage(s). Given the small capacitance of the offset capacitor(s), it is possible to adapt the offset voltage(s) fast enough to thereby change the APT voltage(s) within a predetermined temporal limit (e.g., 0.5 μs). As a result, the fast-switch APT PMIC can enable a power amplifier(s) to support dynamic power control with improved linearity and efficiency.

A fast-switching average power tracking (APT) power management integrated circuit (PMIC) is provided. The fast-switching APT PMIC includes a voltage amplifier(s) and an offset capacitor(s) having a small capacitance (e.g., between 10 nF and 200 nF). The voltage amplifier(s) is configured to generate an initial APT voltage(s) based on an APT target voltage(s) and the offset capacitor(s) is configured to raise the initial APT voltage(s) by an offset voltage(s) to generate an APT voltage(s). In embodiments disclosed herein, the offset voltage(s) is modulated based on the APT target voltage(s). Given the small capacitance of the offset capacitor(s), it is possible to adapt the offset voltage(s) fast enough to thereby change the APT voltage(s) within a predetermined temporal limit (e.g., 0.5 μs). As a result, the fast-switch APT PMIC can enable a power amplifier(s) to support dynamic power control with improved linearity and efficiency.

In order to reduce costs as well as to effectively dissipate heat in certain RF circuits, a semiconductor device of the circuit can include one or more active devices such as transistors, diodes, and/or varactors formed of a first semiconductor material system integrated onto (e.g., bonded to) a base substrate formed of a second semiconductor material system that includes other circuit components. The first semiconductor material system can, for example, be the III-V or III-N semiconductor system, and the second semiconductor material system can, for example be silicon.

A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.

A front end radio frequency (RF) module including one or more first filter circuits configured to implement a front end function by filtering first signals communicated between one or more first antenna and a transceiver and one or more second filter circuits configured to implement at least a portion of an additional network function within the front end RF module by filtering second signals communicated between one or more second antennas and the transceiver.

Broadband feedforward power amplifiers are disclosed herein. In certain embodiments, a broadband feedforward power amplifier includes a power amplifier electrically connected between a radio frequency (RF) input and an RF output, and a feedforward compensation circuit including a first amplifier electrically connected in parallel with the power amplifier, a load impedance, and a second amplifier electrically connected between the radio frequency input and the load impedance. The feedforward compensation circuit generates a compensation signal based on sensing an output of the first amplifier and an output of the second amplifier, and provides the compensation signal to the radio frequency output to thereby compensate the power amplifier for non-linearity.

An example electronic device includes an antenna; a switching regulator; a communication chip including an amplifier, a first linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a first voltage from the switching regulator, and a second linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a second voltage higher than the first voltage from the switching regulator, the communication chip configured to transmit a radio-frequency signal outside of the electronic device through the antenna; and a control circuit. The control circuit is configured to produce an envelope of an input signal input to the amplifier in connection with the radio-frequency signal and to provide the produced envelope to at least one of the first linear regulator or the second linear regulator. The first linear regulator is configured to provide a third voltage corresponding to the envelope to the amplifier using the first voltage based on the envelope having a voltage in a first range. The second linear regulator is configured to provide a fourth voltage higher than the third voltage to the amplifier using the second voltage based on the voltage of the envelope being in a second range including values larger than values included in the first range.

An example electronic device includes an antenna; a switching regulator; a communication chip including an amplifier, a first linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a first voltage from the switching regulator, and a second linear regulator operably connected to the amplifier and the switching regulator and configured to be supplied with a second voltage higher than the first voltage from the switching regulator, the communication chip configured to transmit a radio-frequency signal outside of the electronic device through the antenna; and a control circuit. The control circuit is configured to produce an envelope of an input signal input to the amplifier in connection with the radio-frequency signal and to provide the produced envelope to at least one of the first linear regulator or the second linear regulator. The first linear regulator is configured to provide a third voltage corresponding to the envelope to the amplifier using the first voltage based on the envelope having a voltage in a first range. The second linear regulator is configured to provide a fourth voltage higher than the third voltage to the amplifier using the second voltage based on the voltage of the envelope being in a second range including values larger than values included in the first range.

A radio frequency (RF) summer circuit having a characteristic impedance Z.sub.0 comprises first and second ports coupled by first and second resistances, respectively, to a junction. The circuit further comprises a series combination of a third resistance and a switch movable between open and closed positions and an amplifier having input and output terminals and operable in an off state and an on state wherein the series combination is coupled across the input and output terminals of the amplifier between the junction and a third port. The first resistance, second resistance, and the third resistance are all substantially equal to Z.sub.0/3. Further, when the switch is moved to the closed position and the amplifier is switched to the off state a passive mode of operation is implemented and when the switch is moved to the open position and the amplifier is switched to the on state an active mode of operation is implemented. The RF summer circuit develops a summed signal at the third port equal to a sum of signals at the first and second ports modified by one of first and second gain values.