A power amplifier module includes a combining circuit including a combiner. The combining circuit further includes a first inductor connected in series between an output terminal of a first amplifier and the combiner, a second inductor connected in series between an output terminal of a second amplifier and the combiner, and a second capacitor having an end connected to the combiner and another end grounded. A phase of a third signal from the output terminal of the first amplifier to the second amplifier through the combiner is delayed by about 45 degrees in the first inductor and the second capacitor, and is delayed by about 45 degrees in the second inductor and the second capacitor. A phase of the third signal from the output terminal of the first amplifier to the second amplifier through the first capacitor is advanced by about 90 degrees.

A chopper amplifier circuit includes a first amplifier path with chopper circuitry, a switched-capacitor filter, and multiple gain stages. The chopper amplifier circuit also includes a second amplifier path with a feed-forward gain stage. A chopping frequency of the chopper circuitry is greater than a threshold frequency at which the second amplifier path is used instead of the first amplifier path.

A line driver circuit includes a first input terminal, a second input terminal, a first input stage, a second input stage, a first output stage, and a second output stage. The first input stage includes a first input coupled to the first input terminal, and a second input coupled to the second input terminal. The second input stage includes a first input coupled to the first input terminal, and a second input coupled to the second input terminal. The first output stage includes a first input coupled to a first output terminal of the first input stage and a second input coupled to a first output terminal of the first input stage. A second output stage includes a first input coupled to a second output terminal of the first input stage and a second input coupled to a second output terminal of the first input stage.

A subharmonic switching digital power amplifier system includes a power amplifier core that includes at least one power amplifier operable in a power back-off region and a power supply providing at least one operating voltage to the power amplifier. Characteristically, the power amplifier is toggled at a subharmonic component of a carrier frequency (Fc) to achieve power back-off wherein the power amplifier is operated in a voltage mode or current mode driver. Multi-subharmonics can be used to further enhance the power back-off efficiency. A switching digital power amplifier system employing phase interleaving is also provided.

Aspects generally relate to reducing delay, or phase jitter, in high speed signals transmission. Variations in power supply to ground potential changes the amount of delay introduced by transmit circuitry into the signal being transmitted, resulting in jitter, or phase noise, in the transmitted signal. To reduce phase jitter, or phase noise, aspects disclosed include a variable impedance circuit coupled to the signal distribution network, the impedance level of the variable impedance circuit is adjusted in response to variation in the supply to ground potential, such that the delay introduced by the impedance compensates for changes in the delay due to variations in supply to ground potential, resulting in substantially constant delay.

Disclosed are methods for biasing amplifiers and for manufacturing bias circuits bias for biasing amplifiers. A power amplifier bias circuit can include an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration. The emitter follower device can be configured to provide a bias signal for a power amplifier at an output port. The power amplifier bias circuit can include a reference device configured to mirror an amplifying transistor of an amplifying device of the power amplifier. The emitter follower mirror device can be configured to provide a mirror bias signal to the reference device. A node between the emitter follower device and the emitter follower mirror device can have a voltage of approximately twice a base-emitter voltage (2Vbe) of the amplifying transistor.

Disclosed are a Doherty power amplifier (2), a controlling method and a device. In the Doherty power amplifier (2), the even order harmonic components can be fed to the drain of the amplifier to realize even order harmonic modulation. The even order harmonic components have higher power level than the odd order harmonic components, therefore, higher efficiency could be achieved.

A power amplifier includes a power splitter that splits a first signal into a second signal and a third signal, a first amplifier that amplifies the second signal within an area where the first signal has a power level greater than or equal to a first level and that outputs a fourth signal, a second amplifier that amplifies the third signal within an area where the first signal has a power level greater than or equal to a second level higher than the first level and that outputs a fifth signal, an output unit that outputs an amplified signal of the first signal, a first and a second LC parallel resonant circuit, and a choke inductor having an end to which a power supply voltage is supplied and another end connected to a node of the first and second LC parallel resonant circuits.

Embodiments of RF amplifiers and RF amplifier devices include a transistor, a multiple-section bandpass filter circuit, and a harmonic termination circuit. The bandpass filter circuit includes a first connection node coupled to the amplifier input, a first inductive element coupled between the first connection node and a ground reference node, a first capacitance coupled between the first connection node and a second connection node, a second capacitance coupled between the second connection node and the ground reference node, and a second inductive element coupled between the second connection node and the transistor input. The harmonic termination circuit includes a third inductive element and a third capacitance connected in series between the transistor input and the ground reference node. The harmonic termination circuit resonates at a harmonic frequency of a fundamental frequency of operation of the RF amplifier.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.