H03F3/211

BROADBAND PASSIVE LOAD MODULATION BALANCE POWER AMPLIFIER
20240039477 · 2024-02-01 ·

Methods and apparatuses for facilitating wide bandwidth power amplification with high efficiency for analog RF signals. A passive load modulated balanced amplifier (LMBA) device comprises a balanced power amplifier (BPA) and a directional coupler. The BPA comprises a first power amplifier (PA) configured to amplify a first portion of an input power, a second PA configured to amplify a second portion of the input power, an isolation port, and an output port that outputs the amplified first and second portions of the input power as an output power. The directional coupler is configured to provide a portion of the output power from the output port to the isolation port to modulate a load impedance of the first and second PAs.

POWER AMPLIFIER
20240039484 · 2024-02-01 ·

A power amplifier includes an amplifier circuit configured to amplify a radio frequency input signal, a bias circuit configured to output a bias current to the amplifier circuit, and a bias suppression circuit configured to suppress the bias current based on the radio frequency input signal. The bias circuit includes a first transistor including a collector and a base that are electrically connected to a first node to be input with a current and an emitter electrically connected to a second node, a second transistor including a collector and a base that are electrically connected to the second node, and a third transistor including a base electrically connected to the first node and an emitter, the third transistor being configured to output a bias current from the emitter. The bias suppression circuit draws a current from the second node of the bias circuit based on the radio frequency input signal.

BROADBAND LNA STRUCTURE USING OFFSET ACTIVE COUPLED SEGMENTS
20240039482 · 2024-02-01 ·

A broadband low noise amplifier (LNA) structure (10) includes a main LNA (12), an offset LNA (14), an input splitter (16), and an output combiner (18). The input splitter (16) is configured to split a radio frequency (RF) input signal into a first RF input signal and a second RF input signal with difference phases, which are fed to the main LNA (12) and the offset LNA (14), respectively. Based on the first RF input signal, the main LNA (12) is configured to provide a first RF output signal, and based on the second RF input signal, the offset LNA (14) is configured to provide a second RF output signal. The output combiner (18) is configured to realign the first RF output signal and the second RF output signal, and configured to combine the first and second RF output signals to provide a combined RF output signal.

Low-load-modulation broadband amplifier

Low-load-modulation, broadband power amplifiers and method of use are described. The amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the fully-on and fully backed-off states of the amplifier. With lower load modulation, the power amplifiers described herein exhibit better power-handling capability and RF fractional bandwidth as compared to conventional amplifiers.

Semiconductor device with isolation and/or protection structures
11887945 · 2024-01-30 · ·

The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.

Signal Amplifier

A hearing prosthesis circuit includes a power source, a first amplifier coupled to the power source, and a second amplifier coupled to the power source. The circuit also includes a stimulation component coupled to the first amplifier and the second amplifier. The stimulation component is configured to provide an output in accordance with an electrical signal that includes audio data. Further, the circuit includes a controller coupled to the first amplifier and the second amplifier. The controller is operable in accordance with a first operational setting to use the first amplifier to provide the electrical signal to the stimulation component and the controller is also operable in accordance with a second operational setting to use the second amplifier to provide the electrical signal to the stimulation component. Generally, the first amplifier provides greater signal amplification of the audio data than the second amplifier.

POWER AMPLIFIER DEVICE
20190393847 · 2019-12-26 ·

An N-way RF power amplifier device includes a power divider, multiple first power amplifier circuits, multiple second power amplifier circuits, and a power combiner. The power divider divides an RF input signal into multiple differential signal pairs each including complementary first and second division signals. The first power amplifier circuits amplify the first division signals and the second power amplifier circuits amplify the second division signals in such a way that the amplified first division signals and the amplified second division signals have the same phase. The power combiner combines the amplified first and second division signals into an RF output signal.

Signal processing arrangement for a transmitter

A signal processing arrangement for a transmitter includes an in-phase modulator configured to receive an in-phase signal (I) and configured to modulate the in-phase signal (I); a quadrature modulator configured to receive a quadrature signal (Q) and configured to modulate the quadrature signal (Q); an in-phase demodulator configured to demodulate the modulated in-phase signal (I) and to output a demodulated in-phase signal (I); a quadrature demodulator configured to demodulate the modulated quadrature signal (Q) and to output a demodulated quadrature signal (Q); an in-phase harmonic filter configured to perform a filtering on harmonics in the demodulated in-phase signal (I) and to output an in-phase digital signal (I); and a quadrature harmonic filter configured to perform a filtering on harmonics in the demodulated quadrature signal (Q) and to output a quadrature digital signal (Q).

SYSTEMS, CIRCUITS AND METHODS FOR CORRECTING DYNAMIC ERROR VECTOR MAGNITUDE EFFECTS
20190386619 · 2019-12-19 ·

Systems, circuits and methods related to dynamic error vector magnitude (DEVM) corrections. In some embodiments, a power amplifier (PA) system can include a PA circuit having a plurality of amplification stages, and a bias system in communication with the PA circuit and configured to provide bias signals to the amplification stages. The PA system can further include a first correction circuit configured to generate a correction current that results in an adjusted bias signal for a selected amplification stage, with the adjusted bias signal being configured to compensate for an error vector magnitude (EVM) during a dynamic mode of operation. The PA system can further include a second correction circuit configured to change the correction current based on an operating condition associated with the PA circuit.

FRONT-END FOR PROCESSING 2G SIGNAL USING 3G/4G PATHS

Front-end for processing 2G signal using 3G/4G paths. In some embodiments, a front-end architecture can include a first amplification path and a second amplification path, with each being configured to amplify a 3G/4G signal, and the first amplification path including a phase shifting circuit. The front-end architecture can further include a splitter configured to receive a 2G signal and split the 2G signal into the first and second amplification paths, and a combiner configured to combine amplified 2G signals from the first and second amplification paths into a common output path. The front-end architecture can further include an impedance transformer implemented along the common output path to provide a desired impedance for the combined 2G signal.