Disclosed are a process and a system for ascertaining an operating point of a nonlinear power amplifier, wherein a signal amplified by the power amplifier is received, and a value of a measure of a deviation of the amplitude distribution of the received signal from a Gaussian distribution is ascertained.

A power amplifier module includes a combining circuit including a combiner. The combining circuit further includes a first inductor connected in series between an output terminal of a first amplifier and the combiner, a second inductor connected in series between an output terminal of a second amplifier and the combiner, and a second capacitor having an end connected to the combiner and another end grounded. A phase of a third signal from the output terminal of the first amplifier to the second amplifier through the combiner is delayed by about 45 degrees in the first inductor and the second capacitor, and is delayed by about 45 degrees in the second inductor and the second capacitor. A phase of the third signal from the output terminal of the first amplifier to the second amplifier through the first capacitor is advanced by about 90 degrees.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

Provided is a dual-drive based Doherty amplifier that includes a first power amplifier and a second power amplifier that is in parallel with the first power amplifier. The first power amplifier is configured to receive a first portion of a signal having a first phase, and the second power amplifier is configured to receive a second portion of the signal having a second phase that has a phase difference from the first phase. At least one of the first power amplifier or the second power amplifier includes a dual-drive power amplifier core.

A packaged semiconductor chip includes a semiconductor sub strate having formed thereon: radio-frequency (RF) input and output contact pads, DC contact pads, and first and second amplifier stages. An input of the first amplifier stage is coupled with the RF input contact pad. An input and an output of the second amplifier stage are respectively coupled to an output of the first amplifier stage and the RF output contact pad. The DC contact pads and the input of the first amplifier stages are connected via an input bias coupling path. The outputs of the amplifier stages are connected via an output bias coupling path. The chip further includes a lead frame having RF input and output pins electrically coupled to the RF input and output contact pads, and input bias pins electrically coupled to the DC contact pad.

A power amplifier circuit is a Doherty type. A peak amplifier has a first transistor and a second transistor. A first source terminal is connected to a first constant potential line. A first drain terminal and a second source terminal are connected to a first node. A second drain terminal is connected to a second constant potential line having a higher potential than the first constant potential line. A first control terminal is connected to a first bias voltage application circuit, and an input signal is input to the first control terminal via a first alternating current coupling circuit. A second control terminal is connected to a second bias voltage application circuit and is connected to the first node via a second alternating current coupling circuit. The first node is connected to the first constant potential line via a third alternating current coupling circuit.

A semiconductor device package includes a plurality of input leads, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combined output lead configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal.

Aspects described herein include devices and methods for smart ultra wideband transmissions. In one aspect, an apparatus includes pulse generation circuitry configured to output a plurality of transmission (TX) pulse samples at a selected signal sample rate, where each pulse sample of the plurality of TX pulse samples comprises a value associated with a pulse amplitude at a corresponding sample time The apparatus includes a plurality of power amplifier (PA) cells, with each PA cell of the plurality of PA cells comprising a corresponding current source and associated gates, and where the associated gates of a PA cell are selectable to configure an on state and an off state. Logic circuitry of the apparatus is configured to set the on state or the off state for each PA cell.

A microwave power amplifier arrangement for an electron paramagnetic resonance (EPR) system provides amplified microwave pulses having a microwave frequency in the X-band. The arrangement has a microwave input and a microwave output, and comprises at least one transistor amplifier device, and at least one switchable reflection device. A respective transistor amplifier device comprises a transistor amplifier device input directly or indirectly connected to the microwave input (2), at least one transistor, and a transistor amplifier device output directly or indirectly connected to the microwave output. A respective switchable reflection device comprises a PIN diode and a lambda/4 line connected directly or indirectly to the transistor amplifier device output of at least one transistor amplifier device and to a first port of the PIN diode, with lambda being the wavelength of the microwave radiation within the lambda/4 line. A second port of the PIN diode is connected to ground.

The disclosure relates to an electronic device and a method for wireless communication including a power amplification circuit. According to an embodiment, an electronic device may include: a radio frequency processing module comprising radio frequency circuitry, a first power amplification circuit connected to the radio frequency processing module, a second power amplification circuit connected to the radio frequency processing module and the first power amplification circuit, and a front-end module comprising circuitry connected to the second power amplification circuit and an antenna and configured to transmit a signal, wherein the second power amplification circuit is configured to acquire, from the first power amplification circuit, a first signal obtained by amplifying a signal output from the radio frequency processing module and a second signal by amplifying a signal output from the radio frequency processing module.