A power amplifying apparatus includes a control circuit generating a bias voltage and generating a control signal using a battery voltage and a reference voltage, and a power amplifying circuit boosting the battery voltage according to the control signal to provide an operating voltage, and operating according to the bias voltage and the operating voltage to amplify an input signal, wherein the power amplifying circuit detects the operating voltage and provides a detection voltage to the control circuit, and the control circuit controls the control signal according to the detection voltage.

A multi-mode envelope tracking (ET) amplifier circuit is provided. The multi-mode ET amplifier circuit can operate in a low-resource block (RB) mode, a mid-RB mode, and a high-RB mode. The multi-mode ET amplifier circuit includes fast switcher circuitry having a first switcher path and a second switcher path and configured to generate an alternating current (AC) current. A control circuit activates the fast switcher circuitry in the mid-RB mode and the high-RB mode, while deactivating the fast switcher circuitry in the low-RB mode. More specifically, the control circuit selectively activates one of the first switcher path and the second switcher path in the mid-RB mode and activates both the first switcher path and the second switcher path in the high-RB mode. As a result, it is possible to improve efficiency of ET tracker circuitry and the multi-mode ET amplifier circuit in all operation modes.

According to one mode of the inventive concept, an amplification device includes a first amplification unit configured to amplify an input signal when a power level of the input signal is within a first range, a second amplification unit configured to amplify the input signal when the power level of the input signal is within a second range, and an abnormality sensing unit configured to sense an occurrence of an abnormality in the second amplification unit. The abnormality sensing unit senses reverse power regarding an output of the second amplification unit to generate a sensed voltage and compares the sensed voltage with a reference voltage to sense whether an abnormality occurs in the second amplification unit.

A power amplifier includes a power splitter that splits a first signal into a second signal and a third signal, a first amplifier that amplifies the second signal within an area where the first signal has a power level greater than or equal to a first level and that outputs a fourth signal, a second amplifier that amplifies the third signal within an area where the first signal has a power level greater than or equal to a second level higher than the first level and that outputs a fifth signal, an output unit that outputs an amplified signal of the first signal, a first and a second LC parallel resonant circuit, and a choke inductor having an end to which a power supply voltage is supplied and another end connected to a node of the first and second LC parallel resonant circuits.

An amplifier apparatus (332) comprises a main linear amplifier sub-circuit (402) having a main driving signal input terminal (331) and a main amplifier output terminal (406). The apparatus also comprises an auxiliary linear amplifier sub-circuit (404) having an auxiliary driving signal input terminal (357) and an auxiliary amplifier output terminal (408). A combining network (410) is operably coupled between the main amplifier output terminal (406) and the auxiliary amplifier output terminal (408), the combining network (410) having a main-side terminal (424) and an auxiliary-side terminal (434). The main linear amplifier sub-circuit (402) is arranged to generate, when in use, a main amplified signal in response to a main driving signal applied at the main driving signal input terminal (331). The auxiliary linear amplifier sub-circuit (404) is arranged to generate, when in use, an impedance modifying signal at the auxiliary-side terminal (357) in response to an auxiliary driving signal and at substantially the same time as the main linear amplifier sub-circuit (402) generates the main amplified signal, the auxiliary linear amplifier sub-circuit (404) also being arranged to amplify substantially more than half of each wave cycle of the auxiliary driving signal.

A receiver amplifier and also a receiver equalizer is provided for a three-level signaling system. The receiver amplifier includes a single current source that drives a current into node shared by three transistors arranged in parallel. A trio of input signals corresponds to the three transistors on a one-to-one basis. Each input signal drives the gate of its corresponding transistor. In addition, each transistor produces a corresponding output voltage at a terminal coupled to a resistor. The receiver equalizer includes three transistors and three corresponding equalizing pairs of a resistor and a capacitor. A terminal for the capacitor and for the resistor in each equalizing pair connects to a terminal of the corresponding transistor

Provided is a phase array receiver. A phase array receiver according to an embodiment of the present invention includes a plurality of antennas, a plurality of low-noise amplifiers, a plurality of phase shifters, a plurality of transconductors, and a frequency mixer. A plurality of low-noise amplifiers amplify RF signals received from the plurality of antennas. The plurality of phase shifters adjusts the phase of the RF signals to generate a plurality of RF phase adjustment signals. The plurality of transconductors convert a plurality of RF phase adjustment signals into a plurality of RF current signals based on the gain control signal. The frequency mixer converts a sum of the plurality of RF current signals into a mixed current signal. According to the inventive concept, the linearity of the signal processing may be improved and the area for the implementation of the phase array receiver may be reduced.

Electronic circuits with a switch and methods for operating a switch in an electronic circuit. A first amplifier is coupled by a first path with an antenna. A second amplifier is coupled by a second path with the antenna. A transistor is coupled with the first path at a node. The first transistor includes a back gate. A back-gate bias circuit is coupled with the back gate of the first transistor. The back-gate bias circuit is configured to supply a bias voltage to the back gate of the first transistor that lowers a threshold voltage of the transistor.

An apparatus includes: an input coupler configured to receive an input voltage and output a first coupled voltage and a second coupled voltage in accordance with a first bias voltage and a second bias voltage, respectively; a stacked amplifier pair configured to receive the first coupled voltage and the second coupled voltage and output a first output voltage and a second output voltage in accordance with a first DC voltage, a second DC voltage, and a third DC voltage; and an output combiner configured to establish a combined output voltage in accordance with a combination of the first output voltage and the second output voltage, wherein the stacked amplifier pair includes a first amplifier operating with a power supplied from the second DC voltage to the first DC voltage and a second amplifier operating with a power supplied from the third DC voltage to the second DC voltage.

A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.