Patent classifications
H03F3/211
Power amplifier system
A power amplifier system which operates at a narrow band with high power and high efficiency or at a wide band is provided. Said power amplifier system comprises at least one high power amplifier; at least one connection line; at least one input block which receives at least one signal from an input, which is connected to said high power amplifier and connection line, which sends received signal to either high power amplifier or connection line and which amplifies the power of the signal sent to the connection line; and at least one high power asymmetric output switch, which is connected to said high power amplifier and connection line and which sends signals coming from said high power amplifier and connection line to an output.
Asymmetric Doherty amplifier circuit with shunt reactances
In an asymmetric Doherty amplifier circuit, one or more shunt reactive components are added to at least one side of an impedance inverter connecting the amplifier outputs, to reduce a capacitance imbalance between the two amplifiers caused by their different parasitic capacitances. This enables the (adjusted) parasitic capacitances to be incorporated into a quarter-wavelength transmission line, having a 90-degree phase shift, for the impedance inverter. In one embodiment, a shunt inductance is connected between the impedance inverter, on the side of the larger amplifier, and RF signal ground. The inductance is sized to resonate away substantially the excess parasitic capacitance of the larger amplifier. In another embodiment, a shunt capacitor is connected on the side of the smaller amplifier, thus raising its total capacitance to substantially equal the parasitic capacitance of the larger amplifier. In other embodiments shunt inductances and/or capacitors may be added to one or both amplifiers, and sized to effectively control a characteristic impedance of the impedance inverter.
Power amplifier apparatus
A power amplifier apparatus is provided. The power amplifier apparatus includes a number of multi-stage power amplifiers and a bias circuit configured to generate a number of bias signals (e.g., bias current or bias voltage) to control (e.g., activate or deactivate) the multi-stage power amplifiers. In examples disclosed herein, only one of the multi-stage power amplifiers is activated at a given time. In this regard, the bias circuit can generate the bias signals to collectively activate one of the multi-stage power amplifiers, while deactivating the rest of the multi-stage power amplifiers. As such, it may be possible to control a larger number of power amplifier stages based on a smaller number of bias signals. As a result, it may be possible to eliminate a biasing bump pad(s) from the power amplifier apparatus, thus helping to reduce the footprint and cost of the power amplifier apparatus.
RF POWER SOURCE WITH IMPROVED GALVANIC ISOLATION
Disclosed is an RF (Radio Frequency) power source having a power supply configured to convert an AC (Alternating Current) voltage at a power supply input to a second voltage at a power supply output, and an RF generator configured to receive the second voltage at an RF generator input and to use the second voltage to produce an output RF signal at an RF generator output. According to an embodiment of the disclosure, the power supply performs the voltage conversion without galvanic isolation between the power supply input and the power supply output, which can increase energy efficiency while reducing complexity and cost as well. Instead, the RF generator is provided with galvanic isolation between the RF generator input and the RF generator output, which can be sufficient for achieving galvanic isolation between the power supply input and the RF generator output for safety reasons.
Combing power amplifiers at millimeter wave frequencies
A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.
Power amplifier module
A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.
Linear stage efficiency techniques for H-bridge systems
Techniques for efficient operation of a linear stage in an H-bridge system are provided. In an example, a linear stage can switch between voltage regulation and current regulation over a range of a command signal. The particular regulation mode can depend on the regulation mode of a switched stage of the H-bridge system. Efficiency can be realized by using current regulation of the linear stage when the output voltage of the linear stage moves away from the voltage of a supply rail. Such a control scheme can reduce the voltage across the linear stage for a larger range of the command signal resulting in less heat dissipation of the linear stage compared to conventional control of H-bridge linear stages.
System and method of improving blocking immunity of radio frequency transceiver front end
A power amplifier for a radio frequency transceiver including a driver, a disable circuit, and a bias circuit. The driver includes a source node for receiving a drive voltage when enabled and includes an output node that is susceptible to strong blocker signals when disabled. The bias circuit includes first and second bias nodes for driving the voltage level of the source and output nodes, respectively, to suitable bias voltage levels to minimize impact of blocker signals. The disable circuit includes switch circuits to couple the driver to the bias circuit in the disable mode. The bias circuit may include at least one voltage source. The bias circuit may be coupled to a supply voltage and may include a voltage divider coupled between the source and output nodes. The bias circuit may include a source-follower circuit to isolate the bias voltages from variations of the supply voltage.
GRADIENT POWER AMPLIFIER SYSTEMS AND METHODS
Gradient power amplifier (GPA) systems and methods are provided. A GPA system may include a plurality of paralleled GPAs; and at least one controller operably coupled to the plurality of paralleled GPAs. The at least one controller may be configured to perform operations including: obtaining a total current parameter of the plurality of paralleled GPAs; determining, based on the total current parameter and a target current parameter, a first difference value; and determining, based on the first difference value, a first control parameter of a first GPA of the plurality of paralleled GPAs, wherein the first control parameter is configured to control an output current of the first GPA.
RF AMPLIFIERS HAVING SHIELDED TRANSMISSION LINE STRUCTURES
RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.