A distributed envelope tracking (ET) amplifier circuit and related apparatus are provided. The distributed ET amplifier apparatus includes an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage. In examples discussed herein, the amplifier circuit is co-located with an ET voltage circuit configured to supply the modulated voltage such that a trace inductance between the amplifier circuit and the ET voltage circuit can be reduced to below a defined threshold. By co-locating the amplifier circuit with the ET voltage circuit to reduce a coupling distance between the amplifier circuit and the ET voltage circuit and thus the trace inductance associated with the coupling distance, it may be possible to reduce degradation in the modulated voltage. As a result, it may be possible to improve efficiency and maintain linearity in the amplifier circuit, particularly when the RF signal is modulated at a higher modulation bandwidth.

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.

Techniques are described for power detection of an amplified signal. For example, power detection described herein can receive an amplified signal from a power amplifier, and can generate an output signal that can be fed back to help regulate an output level of the power amplifier. Embodiments receive the amplified signal can be received by a transistor. A first measurement can be obtained at the transistor's emitter corresponding to an average bias level of the amplified signal, and a second measurement can be obtained at the transistor's base. The output signal can be generated as a function of a difference between the two measurements. Some embodiments further compensate for a measured effective diode voltage corresponding to a base-emitter voltage. Such an approach can generate the power detector output signal to be independent of the of the transistor, and therefore less affected by variations in process corners and temperature.

An embodiment of the present invention discloses a voltage amplifier circuit which includes a signal generator, a mixer and an amplifier. The signal generator is arranged to generate an input signal; the mixer is arranged to mix the input signal with an analog signal to generate an intermediate input signal having a first voltage range; and the amplifier is arranged to convert the intermediate input signal into an output signal having a second voltage range in a Rail-to-Rail manner, wherein the second voltage range is larger than the first voltage range.

A phase shifter capable of improving phase accuracy by a simple method is provided. The phase shifter includes a hybrid coupler circuit including inductors with mutual inductances, an amplifying circuit, an impedance matching circuit provided between the hybrid coupler circuit and the amplifying circuit. The impedance matching circuit includes a first resistance element connected to an output node of the hybrid coupler circuit, a capacitance element connected between the first resistance element and the ground line in series, another inductor connected in parallel with the first resistance element, and a second resistance element provided between the inductor and the ground line in series.

Embodiments of a method and device are disclosed. In an embodiment, a Doherty amplifier module includes a substrate including a mounting surface, and a carrier amplifier die, a first peaking amplifier die, and a second peaking amplifier die on the mounting surface. The carrier amplifier die includes a first output bond pad that has a first length and a first width. The first peaking amplifier die includes a second output bond pad including a first main pad portion having a second length and a second width and including a first side pad portion having a third length and a third width. At least one of the second width or the third width is greater than the first width. The second peaking amplifier includes a third output bond pad. A first wirebond array is coupled between the third output bond pad and at least the first side pad portion.

Exemplary aspects are directed to a power-amplification circuit including multiple in-parallel circuit paths, each including a power amplifier driving an immittance converter. Current from each output of the respective immittance converters is combined for delivery to a load. In a more specific example, a control circuit may be used to modulate, such as by enabling or disabling power delivered from, one or more of the power amplifiers for fast, coarse resetting of the overall power delivered to the load, and/or to modulate one or more of the modulate immittance converters (e.g., via a phase or signal-timing adjustment) to finely tune the resetting of the overall power delivered to the load. Using the control circuit for providing both the coarse adjustment and the fine adjustment, and fast acting precise delivery of overall power delivered to a load may be realized for any of a variety of applications.

Power amplifier (PA) devices and methods for fabricating PA devices containing inverted power transistor dies are disclosed. In embodiments, the PA device includes a first set of input and output leads, an inverted first power transistor (e.g., peaking) die electrically coupled between the first set of input and output leads, and a base flange. The inverted first power die includes, in turn, a die body having a die frontside and a die backside opposite the die frontside. A power transistor having a first contact region is formed in the die frontside. A frontside layer system is formed over the die frontside and the power transistor, while an electrically-conductive bond layer attaches the inverted first power transistor die to the base flange. The first contact region of the power transistor is electrically coupled to the base flange through the electrically-conductive bond layer and through the frontside layer system.