A radio-frequency module includes module substrates, multiple electronic components, and multiple external connection terminals. The module substrate has major surfaces that are opposite to each other. The module substrate has major surfaces that are opposite to each other. The module substrate is disposed such that the major surface faces the major surface. The multiple electronic components are disposed between the major surfaces, at the major surface, or at the major surface. The external connection terminals are disposed at the major surface. The multiple electronic components include one or more first electronic components each including at least a transistor and one or more second electronic components each not including any transistor. At the major surface, at least one of the one or more first electronic components is disposed, and the one or more second electronic components are not disposed.

A radio-frequency module includes a module substrate having major surfaces opposite to each other; a module substrate having major surfaces opposite to each other, the major surface being disposed facing the major surface; a first electronic component including a filter coupled to a power amplifier via a switch; a second electronic component including a filter coupled to the power amplifier via the switch; and a third electronic component including the switch. The first electronic component is disposed one of between the major surfaces, on the major surface, and on the major surface. The second electronic component is disposed another one of between the major surfaces, on the major surface, and on the major surface. The third electronic component is disposed other one of between the major surfaces, on the major surface, and on the major surface.

A radio-frequency module includes a module substrate having major surfaces opposite to each other; a module substrate having major surfaces opposite to each other, the major surface being disposed facing the major surface; a first electronic component including a filter coupled to a power amplifier via a switch; a second electronic component including a filter coupled to the power amplifier via the switch; and a third electronic component including the switch. The first electronic component is disposed one of between the major surfaces, on the major surface, and on the major surface. The second electronic component is disposed another one of between the major surfaces, on the major surface, and on the major surface. The third electronic component is disposed other one of between the major surfaces, on the major surface, and on the major surface.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.

A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.