A semiconductor apparatus includes the following elements. A substrate includes a ground portion to which a ground potential is supplied. A semiconductor chip is mounted on the substrate and includes first and second output terminals, a first terminator, and a ground terminal. First and second amplifiers are respectively formed in first and second regions of the semiconductor chip and respectively amplify first and second input signals of first and second frequency bands and output first and second amplified signals from the first and second output terminals via first and second output wires. A first harmonic termination circuit includes a first wire which electrically connects the first terminator and the ground portion. A ground wire is disposed between the first wire and the second output wire in a plan view of a main surface of the semiconductor chip and electrically connects the ground terminal and the ground portion.

A Doherty power amplifier circuit having a main power amplification device, an auxiliary power amplification device arranged in parallel with the main power amplification device, and a load modulation circuit comprising a harmonic injection circuit connected with respective outputs of the main power amplification device and the auxiliary power amplification device. The harmonic injection circuit is arranged to transfer harmonic components generated at the main power amplification device to the auxiliary power amplification device and harmonic components generated at the auxiliary power amplification device to the main power amplification device, when both the main and auxiliary power amplification devices are operating, for modulating the respective outputs of the main power amplification device and the auxiliary power amplification device.

A Doherty power amplifier circuit having a main power amplification device, an auxiliary power amplification device arranged in parallel with the main power amplification device, and a load modulation circuit comprising a harmonic injection circuit connected with respective outputs of the main power amplification device and the auxiliary power amplification device. The harmonic injection circuit is arranged to transfer harmonic components generated at the main power amplification device to the auxiliary power amplification device and harmonic components generated at the auxiliary power amplification device to the main power amplification device, when both the main and auxiliary power amplification devices are operating, for modulating the respective outputs of the main power amplification device and the auxiliary power amplification device.

Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain droop due to self-heating using a Sample and Hold (S&H) circuit. Other embodiments include bias compensation circuits that directly regulate a bias signal to an amplifier stage as a function of localized heating of one or more of amplifier stages. Such bias compensation circuits include physical placement of at least one bias compensation circuit element in closer proximity to at least one amplifier stage than other bias compensation circuit elements. One bias compensation circuit embodiment includes a temperature-sensitive current mirror circuit for regulating the bias signal. Another bias compensation circuit embodiment includes a temperature-sensitive element having a positive temperature coefficient (PTC) for regulating the bias signal.

Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain droop due to self-heating using a Sample and Hold (S&H) circuit. Other embodiments include bias compensation circuits that directly regulate a bias signal to an amplifier stage as a function of localized heating of one or more of amplifier stages. Such bias compensation circuits include physical placement of at least one bias compensation circuit element in closer proximity to at least one amplifier stage than other bias compensation circuit elements. One bias compensation circuit embodiment includes a temperature-sensitive current mirror circuit for regulating the bias signal. Another bias compensation circuit embodiment includes a temperature-sensitive element having a positive temperature coefficient (PTC) for regulating the bias signal.

According to one embodiment, a differential power amplifier includes a pair of transistors, a transformer coupled to the drain terminals of the transistors, and an output transmission line. The differential power amplifier operates in a range of frequencies from a lower operating frequency to an upper operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency. The drains of the transistors are coupled to the primary winding of the transformer. The output transmission line is coupled to the secondary winding of the transformer. The output transmission line further includes at least one inductor-capacitor (LC) circuit that is configured to match predetermined output impedance in view of the lower and upper operating frequencies of the differential power amplifier.

According to one embodiment, a differential power amplifier includes a pair of transistors, a transformer coupled to the drain terminals of the transistors, and an output transmission line. The differential power amplifier operates in a range of frequencies from a lower operating frequency to an upper operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency. The drains of the transistors are coupled to the primary winding of the transformer. The output transmission line is coupled to the secondary winding of the transformer. The output transmission line further includes at least one inductor-capacitor (LC) circuit that is configured to match predetermined output impedance in view of the lower and upper operating frequencies of the differential power amplifier.

A differential power amplifier having first and second amplifiers with first and second signal output terminals along with bias circuitry in communication with the first and second amplifiers is disclosed. The differential amplifier further includes a first output clamp coupled to the first signal output terminal and a bias control terminal of the bias circuitry, wherein the first output clamp is configured to limit voltage at the first signal output terminal to a first predetermined voltage magnitude and lower bias current to the first amplifier in response to an overvoltage at the first signal output terminal. A second output clamp is coupled to the second signal output terminal and is configured to limit voltage at the second signal output terminal to a second predetermined voltage magnitude.

A differential power amplifier having first and second amplifiers with first and second signal output terminals along with bias circuitry in communication with the first and second amplifiers is disclosed. The differential amplifier further includes a first output clamp coupled to the first signal output terminal and a bias control terminal of the bias circuitry, wherein the first output clamp is configured to limit voltage at the first signal output terminal to a first predetermined voltage magnitude and lower bias current to the first amplifier in response to an overvoltage at the first signal output terminal. A second output clamp is coupled to the second signal output terminal and is configured to limit voltage at the second signal output terminal to a second predetermined voltage magnitude.

A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.